Power management MOSFET Siliup SP4011CNK 40V with surface mount PDFN5X6-8L package and ROHS compliance
Product Overview
The SP4011CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and is available in a surface mount PDFN5X6-8L package. This device is ROHS Compliant & Halogen-Free and undergoes 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP4011CNK
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | N-Channel Conditions | N-Channel Rating | P-Channel Conditions | P-Channel Rating | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 V | -40 V | V | ||
| VGS=0V , ID=250uA | 40 | VGS=0V , ID=-250uA | -40 | V | ||
| Gate-Source Voltage | VGS | 20 V | 20 V | V | ||
| VGS=20V , VDS=0V | - | VGS=20V , VDS=0V | - | nA (Leakage) | ||
| Continuous Drain Current | ID | (Tc=25C) | 50 A | (Tc=25C) | -27 A | A |
| VGS = 10V, ID = 7A | - | VGS =-10V, ID =-5A | - | m (RDS(ON)) | ||
| VGS = 4.5V, ID = 6A | - | VGS =-4.5V, ID =-4A | - | m (RDS(ON)) | ||
| IDSS VDS=32V , VGS=0V , TJ=25 | 1 uA | IDSS VDS=-32V , VGS=0V , TJ=25 | -1 uA | uA | ||
| Pulse Drain Current | IDM | 200 A | -108 A | A | ||
| Single pulsed avalanche energy | EAS | 72 mJ | 90 mJ | mJ | ||
| Power Dissipation | PD | (Tc=25C) 42 W | (Tc=25C) 42 W | W | ||
| Thermal Resistance | RJC | 2.9 C/W (Junction-to-Case) | C/W | |||
| Storage Temperature Range | TSTG | -55 to 150 C | C | |||
| Operating Junction Temperature Range | TJ | -55 to 150 C | C | |||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 - 2.5 V | VGS=VDS , ID =-250uA | -1.0 - -2.5 V | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 7A | 10 - 14 m | VGS =-10V, ID =-5A | 15 - 19 m | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 4.5V, ID = 6A | 13 - 20 m | VGS =-4.5V, ID =-4A | 18 - 24 m | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1434 pF | VDS=-15V , VGS=0V , f=1MHz | 1415 pF | pF |
| Output Capacitance | Coss | 91 pF | 204 pF | pF | ||
| Reverse Transfer Capacitance | Crss | 75 pF | 112 pF | pF | ||
| Total Gate Charge | Qg | VDS=32V , VGS=4.5V , ID=7A | 25 nC | VDS=-30V , VGS=-10V , ID=-6A | 23.5 nC | nC |
| Gate-Source Charge | Qgs | 6.3 nC | 3.4 nC | nC | ||
| Gate-Drain Charge | Qgd | 4.6 nC | 4.3 nC | nC | ||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=7A | 7.8 nS | VDD=-15V VGS=-10V , RG=3, ID=-1A | 11 nS | nS |
| Rise Time | Tr | 10.7 nS | 16.7 nS | nS | ||
| Turn-Off Delay Time | Td(off) | 25.8 nS | 35 nS | nS | ||
| Fall Time | Tf | 4.6 nS | 19 nS | nS | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 V | VGS=0V , IS=-1A , TJ=25 | -1.2 V | V |
| Maximum Body-Diode Continuous Current | IS | 50 A | -27 A | A | ||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | 12.5 nS | IS=-20A, di/dt=-100A/us, Tj=25 | 28 nS | nS |
| Reverse recovery charge | Qrr | 9 nC | 36 nC | nC | ||
| PDFN5X6-8L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | |
| A | 0.900 - 1.000 | 0.035 - 0.039 | |
| A3 | 0.254 REF. | 0.010 REF. | |
| D | 4.944 - 5.096 | 0.195 - 0.201 | |
| E | 5.974 - 6.126 | 0.235 - 0.241 | |
| D1 | 1.470 - 1.870 | 0.058 - 0.074 | |
| D2 | 0.470 - 0.870 | 0.019 - 0.034 | |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | |
| D3 | 4.824 - 4.976 | 0.190 - 0.196 | |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | |
| k | 1.190 - 1.390 | 0.047 - 0.055 | |
| b | 0.350 - 0.450 | 0.014 - 0.018 | |
| e | 1.270 TYP. | 0.050 TYP. | |
| L | 0.559 - 0.711 | 0.022 - 0.028 | |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | |
| H | 0.574 - 0.726 | 0.023 - 0.029 | |
| 10 - 12 | 10 - 12 | ||
2504101957_Siliup-SP4011CNK_C45351221.pdf
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