Power management MOSFET Siliup SP4011CNK 40V with surface mount PDFN5X6-8L package and ROHS compliance

Key Attributes
Model Number: SP4011CNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
RDS(on):
24mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Number:
1 N-Channel + 1 P-Channel
Pd - Power Dissipation:
42W
Gate Charge(Qg):
75nC@4.5V
Mfr. Part #:
SP4011CNK
Package:
PDFN5X6-8L
Product Description

Product Overview

The SP4011CNK is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and is available in a surface mount PDFN5X6-8L package. This device is ROHS Compliant & Halogen-Free and undergoes 100% single pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP4011CNK
  • Package: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Rating P-Channel Conditions P-Channel Rating Unit
Drain-Source Voltage VDS 40 V -40 V V
VGS=0V , ID=250uA 40 VGS=0V , ID=-250uA -40 V
Gate-Source Voltage VGS 20 V 20 V V
VGS=20V , VDS=0V - VGS=20V , VDS=0V - nA (Leakage)
Continuous Drain Current ID (Tc=25C) 50 A (Tc=25C) -27 A A
VGS = 10V, ID = 7A - VGS =-10V, ID =-5A - m (RDS(ON))
VGS = 4.5V, ID = 6A - VGS =-4.5V, ID =-4A - m (RDS(ON))
IDSS VDS=32V , VGS=0V , TJ=25 1 uA IDSS VDS=-32V , VGS=0V , TJ=25 -1 uA uA
Pulse Drain Current IDM 200 A -108 A A
Single pulsed avalanche energy EAS 72 mJ 90 mJ mJ
Power Dissipation PD (Tc=25C) 42 W (Tc=25C) 42 W W
Thermal Resistance RJC 2.9 C/W (Junction-to-Case) C/W
Storage Temperature Range TSTG -55 to 150 C C
Operating Junction Temperature Range TJ -55 to 150 C C
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 - 2.5 V VGS=VDS , ID =-250uA -1.0 - -2.5 V V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 7A 10 - 14 m VGS =-10V, ID =-5A 15 - 19 m m
Static Drain-Source On-Resistance RDS(ON) VGS = 4.5V, ID = 6A 13 - 20 m VGS =-4.5V, ID =-4A 18 - 24 m m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz 1434 pF VDS=-15V , VGS=0V , f=1MHz 1415 pF pF
Output Capacitance Coss 91 pF 204 pF pF
Reverse Transfer Capacitance Crss 75 pF 112 pF pF
Total Gate Charge Qg VDS=32V , VGS=4.5V , ID=7A 25 nC VDS=-30V , VGS=-10V , ID=-6A 23.5 nC nC
Gate-Source Charge Qgs 6.3 nC 3.4 nC nC
Gate-Drain Charge Qgd 4.6 nC 4.3 nC nC
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=7A 7.8 nS VDD=-15V VGS=-10V , RG=3, ID=-1A 11 nS nS
Rise Time Tr 10.7 nS 16.7 nS nS
Turn-Off Delay Time Td(off) 25.8 nS 35 nS nS
Fall Time Tf 4.6 nS 19 nS nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 1.2 V VGS=0V , IS=-1A , TJ=25 -1.2 V V
Maximum Body-Diode Continuous Current IS 50 A -27 A A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 12.5 nS IS=-20A, di/dt=-100A/us, Tj=25 28 nS nS
Reverse recovery charge Qrr 9 nC 36 nC nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.000 0.035 - 0.039
A3 0.254 REF. 0.010 REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 1.470 - 1.870 0.058 - 0.074
D2 0.470 - 0.870 0.019 - 0.034
E1 3.375 - 3.575 0.133 - 0.141
D3 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270 TYP. 0.050 TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

2504101957_Siliup-SP4011CNK_C45351221.pdf

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