30V P Channel MOSFET Siliup SP4435BP8 Featuring Low Gate Charge and Fast Switching for Power Devices
Key Attributes
Model Number:
SP4435BP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A
RDS(on):
14mΩ@10V;20mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
158pF
Number:
1 P-Channel
Output Capacitance(Coss):
170pF
Pd - Power Dissipation:
3.1W
Input Capacitance(Ciss):
1.223nF
Gate Charge(Qg):
24.2nC@10V
Mfr. Part #:
SP4435BP8
Package:
SOP-8L
Product Description
Product Overview
The SP4435BP8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 4435
- Package: SOP-8L
- Origin: China (implied by manufacturer and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -30 | V | ||||
| RDS(on)TYP | @-10V | 14 | 20 | m | ||
| RDS(on)TYP | @-4.5V | 20 | m | |||
| ID | -9 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -9 | A | |||
| Pulsed Drain Current | IDM | -36 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 36 | mJ | |||
| Power Dissipation | PD | 1.8 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-8A | 14 | 20 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-6A | 20 | 29 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | 1223 | pF | ||
| Output Capacitance | Coss | 170 | pF | |||
| Reverse Transfer Capacitance | Crss | 158 | pF | |||
| Total Gate Charge | Qg | VDS=-15V, VGS=-10V, ID=-6A | 24.2 | nC | ||
| Gate-Source Charge | Qgs | 2.2 | nC | |||
| Gate-Drain Charge | Qgd | 6.1 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=3, ID=-6A | 11 | nS | ||
| Rise Time | Tr | 4.8 | nS | |||
| Turn-Off Delay Time | Td(off) | 72 | nS | |||
| Fall Time | Tf | 51 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -9 | A | |||
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | 11 | nS | ||
| Reverse Recovery Charge | Qrr | 23 | nC | |||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1The EAS test condition is VDD=-15V, VGS=-10V, L=0.5mH, RG=25
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP4435BP8 | SOP-8L | 4000 |
2504101957_Siliup-SP4435BP8_C41355022.pdf
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