power management solution featuring Siliup SP30P03NK 30V P Channel MOSFET with fast switching speeds
Key Attributes
Model Number:
SP30P03NK
Product Custom Attributes
Pd - Power Dissipation:
55W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V;4.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
650pF
Number:
1 P-Channel
Output Capacitance(Coss):
859pF
Input Capacitance(Ciss):
5.7nF
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
SP30P03NK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP30P03NK is a 30V P-Channel MOSFET designed for efficient power management. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30P03NK
- Package Type: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID=-250uA | -1 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-30A | - | 3 | 4 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-20A | - | 4.5 | 6 | m |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 5700 | - | pF |
| Output Capacitance | Coss | - | - | 859 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 650 | - | pF |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-20A | - | 120 | - | nC |
| Gate-Source Charge | Qgs | - | - | 23 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 17 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=3, ID=-20A | - | 27 | - | nS |
| Rise Time | Tr | - | - | 83 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 76 | - | nS |
| Fall Time | Tf | - | - | 65 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | -90 | A |
| Reverse recover time | Trr | IS=-20A, di/dt=100A/us, Tj=25 | - | 30 | - | nS |
| Reverse recovery charge | Qrr | - | - | 18 | - | nC |
| Drain-Source Voltage | VDSS | - | -30 | - | - | V |
| Gate-Source Voltage | VGSS | - | -20 | - | 20 | V |
| Continuous Drain Current | ID | (Tc=25C) | - | - | -90 | A |
| Continuous Drain Current | ID | (Tc=100C) | - | - | -60 | A |
| Pulse Drain Current Tested | IDM | - | - | - | -360 | A |
| Single pulsed avalanche energy | EAS | 1 | - | - | 625 | mJ |
| Power Dissipation | PD | (Tc=25C) | - | - | 55 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 2.3 | - | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Package Information | Symbol | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |||
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP30P03NK_C41355006.pdf
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