40V mosfet sop8l package Siliup SP4023CP8 designed for load switching and power management solutions
Key Attributes
Model Number:
SP4023CP8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
7A;6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;24mΩ@4.5V;33mΩ@10V;44mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF;102pF
Number:
-
Input Capacitance(Ciss):
834pF;1.215nF
Output Capacitance(Coss):
51pF;184pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
16.2nC@4.5V;20nC@10V
Mfr. Part #:
SP4023CP8
Package:
SOP-8L
Product Description
Product Overview
The SP4023CP8 is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It features a lead-free design and is available in a surface mount SOP-8L package. The MOSFET has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4023CP8
- Package Type: SOP-8L
- Lead Status: Lead-free
- Device Code: 4023
Technical Specifications
| Product Summary | V(BR)DSS | RDS(on)TYP | ID | |
| N-Channel | 40V | 18m@10V | 7A | |
| 24m@4.5V | ||||
| P-Channel | -40V | 33m@-10V | -6A | |
| 44m@-4.5V | ||||
| Parameter | Symbol | Conditions | N-Channel | P-Channel | Unit | ||
| Typ. | Max. | Typ. | Max. | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Voltage | VDS | 40 | - | -40 | - | V | |
| Gate-Source Voltage | VGS | 20 | - | 20 | - | V | |
| Continuous Drain Current | ID | 7 | - | -6 | - | A | |
| Pulsed Drain Current | IDM | 28 | - | -24 | - | A | |
| Single Pulse Avalanche Energy | EAS | 18 | - | 30 | - | mJ | |
| Power Dissipation | PD | 2 | - | 2 | - | W | |
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | - | 62.5 | - | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | - | -55 to 150 | - | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | - | -55 to 150 | - | ||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | 1 | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | 100 | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 2.5 | -1.0 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=5A | - | 25 | - | 45 | m |
| VGS=4.5V , ID=3A | - | 35 | - | 60 | m | ||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 834 | - | 1215 | pF |
| Output Capacitance | Coss | - | 51 | - | 184 | pF | |
| Reverse Transfer Capacitance | Crss | - | 45 | - | 102 | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=4.5V , ID=7A | - | 16.2 | - | 20 | nC |
| Gate-Source Charge | Qgs | - | 4.1 | - | 3.5 | - | |
| Gate-Drain Charge | Qg d | - | 3.1 | - | 4.2 | - | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=5A | - | 5.3 | - | 8 | nS |
| Rise Time | Tr | - | 7.1 | - | 15 | - | |
| Turn-Off Delay Time | Td(off) | - | 15.8 | - | 23 | - | |
| Fall Time | Tf | - | 4.8 | - | 9 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | 1.2 | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | 7 | - | -6 | A | |
| Reverse Recovery Time | Trr | IS=6A, di/dt=100A/us, TJ=25 | - | 16 | - | 11 | nS |
| Reverse Recovery Charge | Qrr | - | 8 | - | 7 | nC | |
| SOP-8L Package Information | |||
| Symbol | Dimensions In Millimeters | Min. | Max. |
| A | 1.35 | 1.75 | |
| A1 | 0.10 | 0.25 | |
| A2 | 1.35 | 1.55 | |
| b | 0.33 | 0.51 | |
| c | 0.17 | 0.25 | |
| D | 4.80 | 5.00 | |
| e | 1.27 REF. | ||
| E | 5.80 | 6.20 | |
| E1 | 3.80 | 4.00 | |
| L | 0.40 | 1.27 | |
| 0 | 8 | ||
2504101957_Siliup-SP4023CP8_C22385400.pdf
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