Power MOSFET transistor Siliup SP4023CTM featuring 40V breakdown voltage and lead free certification
Key Attributes
Model Number:
SP4023CTM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
23A;14A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V;29mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF;102pF
Number:
-
Input Capacitance(Ciss):
834pF;1.215nF
Output Capacitance(Coss):
51pF;184pF
Pd - Power Dissipation:
35W
Gate Charge(Qg):
25nC@4.5V;21.5nC@4.5V
Mfr. Part #:
SP4023CTM
Package:
TO-252-4L
Product Description
Product Overview
The SP4023CTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It features a lead-free product acquisition and is available in a surface mount package. This MOSFET is 100% single pulse avalanche energy tested, making it suitable for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4023CTM
- Package: TO-252-4L
- Certifications: Lead free product is acquired
- Device Code: 4023C
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel (TYP) | P-Channel (TYP) | Units |
|---|---|---|---|---|---|
| Product Summary | |||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 40V | -40V | ||
| On-Resistance (RDS(on)) | @10V | 18m | |||
| On-Resistance (RDS(on)) | @4.5V | 20m | |||
| On-Resistance (RDS(on)) | @-10V | 29m | |||
| On-Resistance (RDS(on)) | @-4.5V | 36m | |||
| Continuous Drain Current | ID | (TC=25) | 23A | -14A | |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage | VDS | (Ta=25) | 40V | -40V | V |
| Gate-Source Voltage | VGS | (Ta=25) | 20V | 20V | V |
| Continuous Drain Current | ID | (TC=25) | 23A | -14A | A |
| Continuous Drain Current | ID | (TC=100) | 15A | -9.3A | A |
| Pulsed Drain Current | IDM | 92A | -46A | A | |
| Single Pulse Avalanche Energy | EAS | 18mJ | 29mJ | mJ | |
| Power Dissipation | PD | (TC=25) | 35W | W | |
| Thermal Resistance (Junction-to-Case) | RJC | 3.6 /W | /W | ||
| Storage Temperature Range | TSTG | -55 to 150 | |||
| Operating Junction Temperature Range | TJ | -55 to 150 | |||
| N-Channel Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40V | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V, VGS=0V, TJ=25 | -1uA | - | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100nA | 100nA | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0-2.0V | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=7A | 18-22m | - | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=6A | 20-27m | - | m |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 834pF | - | pF |
| Output Capacitance | Coss | 51pF | - | pF | |
| Reverse Transfer Capacitance | Crss | 45pF | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=4.5V, ID=5A | 25nC | - | nC |
| Gate-Source Charge | Qgs | 6nC | - | nC | |
| Gate-Drain Charge | Qgd | 5nC | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V, RG=3, ID=5A | 8nS | - | nS |
| Rise Time | Tr | 7nS | - | nS | |
| Turn-Off Delay Time | Td(off) | 26nS | - | nS | |
| Fall Time | Tf | 4nS | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | 1.2V | - | V |
| Maximum Body-Diode Continuous Current | IS | 23A | - | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 10nS | - | nS |
| Reverse Recovery Charge | Qrr | 5nC | - | nC | |
| P-Channel Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | - | -40V | V |
| Drain-Source Leakage Current | IDSS | VDS=-32V, VGS=0V, TJ=25 | - | -1uA | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 100nA | 100nA | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | - | -1.0 to -2.0V | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5A | - | 29-37m | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | - | 36-48m | m |
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1MHz | - | 1215pF | pF |
| Output Capacitance | Coss | - | 184pF | pF | |
| Reverse Transfer Capacitance | Crss | - | 102pF | pF | |
| Total Gate Charge | Qg | VDS=-15V, VGS=-4.5V, ID=-1A | - | 21.5nC | nC |
| Gate-Source Charge | Qgs | - | 3.5nC | nC | |
| Gate-Drain Charge | Qgd | - | 3.3nC | nC | |
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V, RG=3, ID=-1A | - | 11nS | nS |
| Rise Time | Tr | - | 16.7nS | nS | |
| Turn-Off Delay Time | Td(off) | - | 35nS | nS | |
| Fall Time | Tf | - | 19nS | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | -1.2V | V |
| Maximum Body-Diode Continuous Current | IS | - | -14A | A | |
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 14nS | nS |
| Reverse Recovery Charge | Qrr | - | 8nC | nC | |
| Package Information (TO-252-4L) | |||||
| Dimension A | 2.20 - 2.40 mm | ||||
| Dimension A1 | 0 - 0.15 mm | ||||
| Dimension b | 0.40 - 0.60 mm | ||||
| Dimension b2 | 0.50 - 0.80 mm | ||||
| Dimension b3 | 5.20 - 5.50 mm | ||||
| Dimension c2 | 0.45 - 0.55 mm | ||||
| Dimension D | 5.40 - 5.80 mm | ||||
| Dimension D1 | 4.57 mm | ||||
| Dimension E | 6.40 - 6.80 mm | ||||
| Dimension E1 | 3.81 mm | ||||
| Dimension e | 1.27 REF | ||||
| Dimension F | 0.40 - 0.60 mm | ||||
| Dimension H | 9.40 - 10.20 mm | ||||
| Dimension L | 1.40 - 1.77 mm | ||||
| Dimension L1 | 2.40 - 3.00 mm | ||||
| Dimension L4 | 0.80 - 1.20 mm | ||||
2504101957_Siliup-SP4023CTM_C22385372.pdf
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