Power Switching MOSFET Siliup SP020N16GHTQ 200V N Channel with TO 220 3L Package and Low Gate Charge
Key Attributes
Model Number:
SP020N16GHTQ
Product Custom Attributes
Mfr. Part #:
SP020N16GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP020N16GHTQ is a 200V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced split gate trench technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is designed for power switching applications, DC-DC converters, and power management systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP020N16GHTQ
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | 75 | A | |
| Continuous Drain Current (Tc=100) | ID | 50 | A | |
| Pulsed Drain Current | IDM | 300 | A | |
| Single Pulse Avalanche Energy | EAS | VDD=50V, VGS=10V, L=0.5mH, RG=25 | 900 | mJ |
| Power Dissipation (Tc=25) | PD | 320 | W | |
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 200 | V |
| Drain Cut-Off Current | IDSS | VDS=160V , VGS=0V , TJ=25 | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 - 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | 16 - 22.5 | m |
| Input Capacitance | Ciss | VDS=100V , VGS=0V , f=1MHz | 5632 | pF |
| Output Capacitance | Coss | 211 | pF | |
| Reverse Transfer Capacitance | Crss | 15 | pF | |
| Total Gate Charge | Qg | VDS=100V , VGS=10V , ID=35A | 78 | nC |
| Gate-Source Charge | Qgs | 31 | nC | |
| Gate-Drain Charge | Qg | 17 | nC | |
| Turn-On Delay Time | td(on) | VDD=100V, VGS=10V , RG=10, ID=35A | 45 | nS |
| Rise Time | tr | 46 | nS | |
| Turn-Off Delay Time | td(off) | 79 | nS | |
| Fall Time | tf | 19 | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 75 | A | |
| Reverse Recovery Time | Trr | IS=35A, di/dt=100A/us, TJ=25 | 136 | nS |
| Reverse Recovery Charge | Qrr | 421 | nC |
Package Information (TO-220-3L)
| Symbol | Dimensions (mm) |
|---|---|
| A | 2.700 - 2.900 |
| B | 6.400 - 6.800 |
| C | 0.300 - 0.700 |
| D | 11 - 15 |
| E | 1.1 - 1.5 |
| F | 0.7 - 0.9 |
| G | 2.54TYP |
| W | 9.8 - 10.2 |
| H | 4.3 - 4.7 |
| H1 | 2.2 - 2.5 |
| K | 2.7 - 3.1 |
| L | 14.8 - 16.8 |
| L1 | 9.0 - 9.4 |
| N | 1.2 - 1.4 |
| P | 12.7 - 13.3 |
| P1 | 7.6 - 8.2 |
| Q | 3.5 - 3.7 |
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP020N16GHTQ | TO-220-3L | 50 |
2506271732_Siliup-SP020N16GHTQ_C49257220.pdf
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