60V N Channel Power MOSFET Siliup SP60N08GTH Featuring Low RDSon and Split Gate Trench Technology for Switching
Key Attributes
Model Number:
SP60N08GTH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
68A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
310pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
81W
Gate Charge(Qg):
27.9nC@10V
Mfr. Part #:
SP60N08GTH
Package:
TO-252
Product Description
Product Overview
The SP60N08GTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), achieved through advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N08GTH
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on)TYP | @10V | 7.5 | m | |||
| RDS(on)TYP | @4.5V | 10 | m | |||
| Continuous Drain Current | ID | 68 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 68 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 45 | A | |||
| Pulse Drain Current | IDM | Tested | 272 | A | ||
| Single Pulse Avalanche Energy | EAS | 182 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 68 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.84 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.5 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 7.5 | 10 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 10 | 13 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | - | 310 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 25 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 27.9 | - | nC |
| Gate-Source Charge | Qgs | - | 7.8 | - | nC | |
| Gate-Drain Charge | Qg d | - | 6.2 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - | 14 | - | nS |
| Rise Time | tr | - | 26 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 33.8 | - | nS | |
| Fall Time | tf | - | 26.4 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 68 | A | |
| Reverse Recovery Time | Trr | IS=30 A, di/dt=100 A/sTJ=25 | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | 23 | - | nC | |
| Package Information | ||||||
| Package Type | TO-252 | |||||
| Pin Configuration | (1:G 2:D 3:S) | |||||
| Marking | 60N08G : Product code, ** : Week code | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP60N08GTH | TO-252 | 2500 | ||||
| TO-252 Package Dimensions (Dimensions in Millimeters) | ||||||
| Symbol | Min. | Max. | Symbol | Min. | Max. | |
| A | 2.200 | 2.400 | A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | D1 | 5.100 | 5.460 | |
| D2 | 4.830 REF. | E | 6.000 | 6.200 | ||
| e | 2.186 | 2.386 | L | 9.800 | 10.400 | |
| L1 | 2.900 REF. | L2 | 1.400 | 1.700 | ||
| L3 | 1.600 REF. | L4 | 0.600 | 1.000 | ||
| 1.100 | 1.300 | 0 | 8 | |||
| h | 0.000 | 0.300 | V | 5.350 REF. | ||
2504101957_Siliup-SP60N08GTH_C22466773.pdf
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