Siliup SP60P03GHTQ 60V P Channel Power MOSFET Featuring Split Gate Trench Technology for Power Switching
Key Attributes
Model Number:
SP60P03GHTQ
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
110pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.517nF
Input Capacitance(Ciss):
8.364nF
Pd - Power Dissipation:
145W
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
SP60P03GHTQ
Package:
TO-220-3L-C
Product Description
Product Overview
The SP60P03GHTQ is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge and Rds(on), and utilizes advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60P03GH
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Rds(on) | RDS(on)TYP | @-10V | 3.5 | m | ||
| Continuous Drain Current | ID | -200 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | -60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | -200 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -134 | A | ||
| Pulsed Drain Current | IDM | -800 | A | |||
| Power Dissipation | PD | (Tc=25) | 145 | W | ||
| Single Pulsed Avalanche Energy | EAS | 1806 | mJ | |||
| Thermal Resistance Junction-to-Case | RJC | 0.86 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=-48V,VGS=0V | -1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V,VDS=0V | 0.1 | A | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=-250A | -1.5 | -3.5 | V | |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V, ID=-20A | 3.8 | 4.8 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =-30V, VGS =0V, f = 1MHz | 8364 | pF | ||
| Output Capacitance | Coss | VDS =-30V, VGS =0V, f = 1MHz | 1517 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =-30V, VGS =0V, f = 1MHz | 110 | pF | ||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS= -30V, ID= -70A, VGS= -10V | 82 | nC | ||
| Gate-Source Charge | Qgs | VDS= -30V, ID= -70A, VGS= -10V | 26 | nC | ||
| Gate-Drain Charge | Qg d | VDS= -30V, ID= -70A, VGS= -10V | 18 | nC | ||
| Turn-On Delay Time | td(on) | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | 20 | ns | ||
| Rise Time | tr | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | 58 | ns | ||
| Turn-Off Delay Time | td(off) | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | 145 | ns | ||
| Fall Time | tf | VDD= -20V, ID= -70A, VGS= -10V, RG=2.6 | 168 | ns | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS =-1A, VGS = 0V | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -130 | A | |||
| Reverse Recovery Time | Trr | IS=-50A, di/dt=-100A/us, TJ=25 | 65 | ns | ||
| Reverse Recovery Charge | Qrr | IS=-50A, di/dt=-100A/us, TJ=25 | 116 | nC | ||
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP60P03GHTQ_C42372354.pdf
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