Power MOSFET Siliup SP011N02GHTF Featuring Low RDSon and Single Pulse Avalanche Energy Tested Device
Key Attributes
Model Number:
SP011N02GHTF
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
235A
RDS(on):
2.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
270W
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
SP011N02GHTF
Package:
TO-247
Product Description
Product Overview
The SP011N02GHTF is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N02GHTF
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Units |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 110 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current (Tc=25) | ID | (Tc=25) | 235 | A |
| Continuous Drain Current (Tc=100) | ID | (Tc=100) | 150 | A |
| Pulsed Drain Current | IDM | 880 | A | |
| Single Pulse Avalanche Energy | EAS | 1849 | mJ | |
| Power Dissipation (Tc=25) | PD | (Tc=25) | 270 | W |
| Thermal Resistance Junction-to-Case | RJC | 0.46 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 110 | V |
| Drain Cut-Off Current | IDSS | VDS=80V , VGS=0V , TJ=25 | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 to 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | 2.2 to 2.8 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 9625 | pF |
| Output Capacitance | Coss | 1608 | pF | |
| Reverse Transfer Capacitance | Crss | 75 | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=125A | 160 | nC |
| Gate-Source Charge | Qgs | 31 | nC | |
| Gate-Drain Charge | Qgd | 37 | nC | |
| Turn-On Delay Time | td(on) | VDD=50V, VGS=10V , RG=6, ID=125A | 35 | nS |
| Rise Time | tr | 68 | nS | |
| Turn-Off Delay Time | td(off) | 150 | nS | |
| Fall Time | tf | 105 | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | 220 | A | |
| Reverse Recovery Time | trr | IS=50A, di/dt=100A/us, TJ=25 | 88 | nS |
| Reverse Recovery Charge | Qrr | 195 | nC |
Package Outline Dimensions (TO-247)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Order Information
| Device | Package | Unit/Tube |
|---|---|---|
| SP011N02GHTF | TO-247 | 30 |
2506271720_Siliup-SP011N02GHTF_C49257252.pdf
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