20V Dual P Channel MOSFET Siliup SP20P50DP8 with Low On Resistance and High Current Handling Capability
Key Attributes
Model Number:
SP20P50DP8
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
90mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
2 P-Channel
Output Capacitance(Coss):
75pF
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
12nC@0V
Mfr. Part #:
SP20P50DP8
Package:
SOP-8
Product Description
Product Overview
The SP20P50DP8 is a 20V Dual P-Channel MOSFET designed for high power and current handling capabilities. It features low on-resistance at various gate-source voltages, including < 90m at VGS=-2.5V and < 60m at VGS=-4.5V. This lead-free product is suitable for surface mounting and is ideal for applications such as PWM, load switching, and power management.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20P50DP8
- Device Code: 20P50D
- Package: SOP-8
- Lead Free: Yes
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage | V(BR)DSS | -20 | V | |||
| On-Resistance | RDS(on) | -4.5V | 50 | m | ||
| On-Resistance | RDS(on) | -2.5V | 70 | m | ||
| Continuous Drain Current | ID | -5 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -5 | A | |||
| Drain Current-Pulsed | IDM | -20 | A | |||
| Power Dissipation | PD | 3.1 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 52 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-20V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID = -250A | -0.5 | -0.7 | -1 | V |
| Drain-source on-resistance | RDS(on) | VGS = -4.5V, ID = -4A | 50 | 60 | m | |
| Drain-source on-resistance | RDS(on) | VGS = -2.5V, ID = -2A | 70 | 90 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHz | 405 | pF | ||
| Output Capacitance | Coss | 75 | pF | |||
| Reverse Transfer Capacitance | Crss | 55 | pF | |||
| Total Gate Charge | Qg | VDS =-10V,VGS =-2.5V,ID=-3A | 3.3 | 12 | nC | |
| Gate-Source Charge | Qgs | 0.7 | nC | |||
| Gate-Drain Charge | Qg | 1.3 | nC | |||
| Turn-on delay time | td(on) | VDD=-10V,VGEN=-4.5V,ID=-1A RL=10,RGEN=1 | 11 | ns | ||
| Turn-on rise time | tr | 35 | ns | |||
| Turn-off delay time | td(off) | 30 | ns | |||
| Turn-off fall time | tf | 10 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=-1A | -0.7 | -1.3 | V | |
Package Information
| Symbol | Dimensions In Millimeters | Min. | Max. |
|---|---|---|---|
| A | 1.35 | 1.75 | |
| A1 | 0.10 | 0.25 | |
| A2 | 1.35 | 1.55 | |
| b | 0.33 | 0.51 | |
| c | 0.17 | 0.25 | |
| D | 4.80 | 5.00 | |
| e | 1.27 REF. | ||
| E | 5.80 | 6.20 | |
| E1 | 3.80 | 4.00 | |
| L | 0.40 | 1.27 | |
| 0 | 8 |
2411212332_Siliup-SP20P50DP8_C41355150.pdf
Related Products
NPN General Purpose Amplifier YANGJIE MMBT2222AT SOT523 Package RoHS Compliant Electronic Component
Product OverviewThe MMBT2222AT is an NPN General Purpose Amplifier in a SOT-523 surface mount package, ideally suited for automatic insertion. It offers a moisture sensitivity level of 1 and meets UL-94 V-0 flammability rating, being halogen-free. This component is designed for general-purpose ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
