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quality Siliup SP12N65TG 650V N Channel Planar MOSFET Designed for Power Switching and Low Rdson Performance factory
quality Siliup SP12N65TG 650V N Channel Planar MOSFET Designed for Power Switching and Low Rdson Performance factory

Siliup SP12N65TG 650V N Channel Planar MOSFET Designed for Power Switching and Low Rdson Performance

Key Attributes
Model Number: SP12N65TG
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Output Capacitance(Coss):
139pF
Input Capacitance(Ciss):
1.905nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
SP12N65TG
Package:
TO-220F
Product Description

Product Overview

The SP12N65TG is a 650V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-frequency switching applications, this MOSFET features fast switching speeds, low gate charge, and low Rdson. It is 100% tested for single pulse avalanche energy and is ideal for DC-DC converters and synchronous rectification.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: SP12N65TG
  • Package: TO-220F

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS 30 V
Continuous Drain Current (Tc=25) ID 12 A
Continuous Drain Current (Tc=100) ID 8 A
Pulsed Drain Current IDM 48 A
Single Pulse Avalanche Energy EAS 605 mJ 1
Power Dissipation (Tc=25) PD 40 W
Thermal Resistance Junction-to-Case RJC 3.1 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS 650 V ID = 250A, VGS = 0V
Drain Cut-Off Current IDSS 1 A VDS = 520V, VGS = 0V
Gate Leakage Current IGSS 100 nA VGS = 30V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.0 to 4.0 V VDS = VGS, ID = 250A
Drain-Source ON Resistance RDS(ON) 0.6 to 0.75 VGS = 10V, ID = 6A
Input Capacitance Ciss 1905 pF VDS =25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 139 pF
Reverse Transfer Capacitance Crss 9 pF
Total Gate Charge Qg 43 nC VDS=500V , VGS=10V , ID=12A
Gate-Source Charge Qgs 9 nC
Gate-Drain Charge Qg d 15 nC
Turn-On Delay Time td(on) 25 nS VDD=325V , VGS=10V , RG=10, ID=10A
Rise Time tr 39 nS
Turn-Off Delay Time td(off) 52 nS
Fall Time tf 41 nS
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS 12 A
Body Diode Reverse Recovery Time Trr 116 nS IS = 12A, dIF/dt = 100A/us
Body Diode Reverse Recovery Charge Qrr 10.4 uC

Note: 1. The test condition is VDD=50V,VGS=10V,L=10mH,RG=30;

Package Information (TO-220F):

Symbol Dimensions (Millimeters)
Min. Max. REF.
A 4.300 4.700
A1 1.300
A2 2.800 3.200
A3 2.500 2.900
b 0.500 0.750
b1 1.100 1.350
b2 1.500 1.750
c 0.500 0.750
D 9.960 10.360
E 14.800 15.200
e 2.540 TYP.
F 2.700 REF.
3.500 REF.
h 0.000 0.300
h1 0.800 REF.
h2 0.500 REF.
L 28.000 28.400
L1 1.700 1.900
L2 0.900 1.100

2504101957_Siliup-SP12N65TG_C42372387.pdf

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