Power management component Siliup SP30N06NJ N Channel MOSFET with fast switching and low on resistance
Product Overview
The SP30N06NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, low on-resistance (6.5m @ 10V and 10m @ 4.5V), and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Material: Silicon
- Package: PDFN3X3-8L
- Device Code: 30N06
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on)TYP | @10V | 6.5 | m | ||
| RDS(on)TYP | RDS(on)TYP | @4.5V | 10 | m | ||
| ID | ID | 45 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 45 | A | |||
| Pulse Drain Current Tested | IDM | 180 | A | |||
| Single Pulse Avalanche Energy | EAS | 90 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 25 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 5 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 6.5 | 8.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=15A | - | 10 | 15 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1378 | - | pF |
| Output Capacitance | Coss | - | 195 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 155 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=30A | - | 33.7 | - | nC |
| Gate-Source Charge | Qgs | - | 8.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 7.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=3, ID=30A | - | 7.5 | - | nS |
| Rise Time | Tr | - | 14.5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 35.2 | - | nS | |
| Fall Time | Tf | - | 9.6 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | 45 | A | ||
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 11 | - | nS |
| Reverse recovery charge | Qrr | - | 5 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Dimension | Symbol | Unit | Min. | Max. | Min. | Max. |
| A | A | mm | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | A1 | mm | 0.152 | REF. | 0.006 | REF. |
| A2 | A2 | mm | 0.000 | 0.050 | 0.000 | 0.002 |
| D | D | mm | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | D1 | mm | 2.300 | 2.600 | 0.091 | 0.102 |
| E | E | mm | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | E1 | mm | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | E2 | mm | 1.535 | 1.935 | 0.060 | 0.076 |
| b | b | mm | 0.200 | 0.400 | 0.008 | 0.016 |
| e | e | mm | 0.550 | 0.750 | 0.022 | 0.030 |
| L | L | mm | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | L1 | mm | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | L2 | mm | 0.000 | 0.100 | 0.000 | 0.004 |
| L3 | L3 | mm | 0.000 | 0.100 | 0.000 | 0.004 |
| H | H | mm | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 | |||
2504101957_Siliup-SP30N06NJ_C41354868.pdf
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