Power management component Siliup SP30N06NJ N Channel MOSFET with fast switching and low on resistance

Key Attributes
Model Number: SP30N06NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
45A
RDS(on):
6.5mΩ@10V;10mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
155pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Input Capacitance(Ciss):
1.378nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
33.7nC@10V
Mfr. Part #:
SP30N06NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP30N06NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, low on-resistance (6.5m @ 10V and 10m @ 4.5V), and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Material: Silicon
  • Package: PDFN3X3-8L
  • Device Code: 30N06

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on)TYP @10V 6.5 m
RDS(on)TYP RDS(on)TYP @4.5V 10 m
ID ID 45 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 45 A
Pulse Drain Current Tested IDM 180 A
Single Pulse Avalanche Energy EAS 90 mJ
Power Dissipation (Tc=25C) PD 25 W
Thermal Resistance Junction-to-Case RJC 5 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 6.5 8.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=15A - 10 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 1378 - pF
Output Capacitance Coss - 195 - pF
Reverse Transfer Capacitance Crss - 155 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=30A - 33.7 - nC
Gate-Source Charge Qgs - 8.5 - nC
Gate-Drain Charge Qgd - 7.5 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V, VGS=10V , RG=3, ID=30A - 7.5 - nS
Rise Time Tr - 14.5 - nS
Turn-Off Delay Time Td(off) - 35.2 - nS
Fall Time Tf - 9.6 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - 45 A
Reverse recover time Trr IS=20A, di/dt=100A/us, Tj=25 - 11 - nS
Reverse recovery charge Qrr - 5 - nC
Package Information (PDFN3X3-8L)
Dimension Symbol Unit Min. Max. Min. Max.
A A mm 0.650 0.850 0.026 0.033
A1 A1 mm 0.152 REF. 0.006 REF.
A2 A2 mm 0.000 0.050 0.000 0.002
D D mm 2.900 3.100 0.114 0.122
D1 D1 mm 2.300 2.600 0.091 0.102
E E mm 2.900 3.100 0.114 0.122
E1 E1 mm 3.150 3.450 0.124 0.136
E2 E2 mm 1.535 1.935 0.060 0.076
b b mm 0.200 0.400 0.008 0.016
e e mm 0.550 0.750 0.022 0.030
L L mm 0.300 0.500 0.012 0.020
L1 L1 mm 0.180 0.480 0.007 0.019
L2 L2 mm 0.000 0.100 0.000 0.004
L3 L3 mm 0.000 0.100 0.000 0.004
H H mm 0.315 0.515 0.012 0.020
9 13 9 13

2504101957_Siliup-SP30N06NJ_C41354868.pdf

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