85V N Channel Power MOSFET Siliup SP85N02AGHTO Featuring Low RDSon and Split Gate Trench Technology
Key Attributes
Model Number:
SP85N02AGHTO
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
310A
RDS(on):
1.7mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
76pF
Number:
1 N-channel
Output Capacitance(Coss):
1.67nF
Pd - Power Dissipation:
405W
Input Capacitance(Ciss):
9.86nF
Gate Charge(Qg):
143nC@10V
Mfr. Part #:
SP85N02AGHTO
Package:
TOLL-8L
Product Description
Product Overview
The SP85N02AGH is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is designed for power switching applications, including DC-DC converters and power management systems. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP85N02AGH
- Package: TOLL
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 85 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current (Tc=25) | ID | 310 | A | |
| Continuous Drain Current (Tc=100) | ID | 207 | A | |
| Pulsed Drain Current | IDM | 1240 | A | |
| Single Pulse Avalanche Energy | EAS | 952 | mJ | |
| Power Dissipation (Tc=25) | PD | 405 | W | |
| Thermal Resistance Junction-to-Case | RθJC | 0.35 | /W | |
| Storage Temperature Range | TSTG | -55 to 150 | ||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | 85 (Typ: 90) | V | ID = 250µA, VGS = 0V |
| Drain Cut-Off Current | IDSS | 1 | µA | VDS = 68V, VGS = 0V |
| Gate Leakage Current | IGSS | ±0.1 | µA | VGS = ±20V, VDS = 0V |
| Gate Threshold Voltage | VGS(th) | 2.0 - 4.0 (Typ: 3.0) | V | VDS = VGS, ID = 250µA |
| Drain-Source ON Resistance | RDS(ON) | 1.7 - 2.1 (Typ: 1.7) | mΩ | VGS = 10V, ID = 20A |
| Input Capacitance | Ciss | 9860 | pF | VDS =40V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 1670 | pF | |
| Reverse Transfer Capacitance | Crss | 76 | pF | |
| Total Gate Charge | Qg | 143 | nC | VDS=40V , VGS=10V , ID=165A |
| Gate-Source Charge | Qgs | 51 | nC | |
| Gate-Drain Charge | Qgd | 25 | nC | |
| Turn-On Delay Time | td(on) | 27 | nS | VGS = 10V, VDS = 40V, ID=165A , RG = 1.6Ω |
| Rise Time | tr | 75 | nS | |
| Turn-Off Delay Time | td(off) | 86 | nS | |
| Fall Time | tf | 35 | nS | |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 1A, VGS = 0V |
| Maximum Body-Diode Continuous Current | IS | 310 | A | |
| Reverse Recovery Time | trr | 115 | nS | IS=155A, di/dt=100A/µs, TJ=25℃ |
| Reverse Recovery Charge | Qrr | 320 | nC |
Package Information (TOLL)
| Symbol | Dimensions (Millimeters) | |||
|---|---|---|---|---|
| Min. | Nom. | Max. | ||
| A | 2.20 | 2.30 | 2.40 | |
| b | 0.65 | 0.75 | 0.85 | |
| C | 0.508 REF. | |||
| D | 10.25 | 10.40 | 10.55 | |
| D1 | 2.85 | 3.00 | 3.15 | |
| E | 9.75 | 9.90 | 10.05 | |
| E1 | 9.65 | 9.80 | 9.95 | |
| E2 | 8.95 | 9.10 | 9.25 | |
| E3 | 7.25 | 7.40 | 7.55 | |
| e | 1.20 BSC | |||
| F | 1.05 | 1.20 | 1.35 | |
| H | 11.55 | 11.70 | 11.85 | |
| H1 | 6.03 | 6.18 | 6.33 | |
| H2 | 6.85 | 7.00 | 7.15 | |
| H3 | 3.00 BSC | |||
| L | 1.55 | 1.70 | 1.85 | |
| L1 | 0.55 | 0.7 | 0.85 | |
| L2 | 0.45 | 0.6 | 0.75 | |
| M | 0.08 REF. | |||
| β | 8° | 10° | 12° | |
| K | 4.25 | 4.40 | 4.55 | |
2504101957_Siliup-SP85N02AGHTO_C22466787.pdf
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