60V N Channel MOSFET Siliup BSS139 Featuring SOT 23 Package and 2KV ESD Protection for Battery Switches
Key Attributes
Model Number:
BSS139
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
220mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
12pF
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
BSS139
Package:
SOT-23
Product Description
Product Overview
The BSS139 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mount applications, it offers high power and current handling capabilities, along with ESD protection up to 2KV. This MOSFET is ideal for use in battery switches and DC/DC converters, featuring a SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Package Type: SOT-23
- Channel Type: N-Channel
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage | V(BR)DSS | 60 | V | |||
| On-Resistance | RDS(on) | @10V | 2 | 5 | ||
| On-Resistance | RDS(on) | @4.5V | 2.5 | 8 | ||
| Continuous Drain Current | ID | 220 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 220 | mA | |||
| Pulse Drain Current | IDM | Tested | 880 | mA | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1 | 1.45 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =500mA | - | 2 | 5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 2.5 | 8 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | - | 6 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | - | 0.29 | - | ||
| Gate-Drain Charge | Qgd | - | 0.2 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-23 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | REF. | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | REF. | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-BSS139_C41349576.pdf
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