Siliup SP30N04TH 30 Volt MOSFET Featuring TO 252 Package and Low Rdson for Power Switching Applications
Key Attributes
Model Number:
SP30N04TH
Product Custom Attributes
Pd - Power Dissipation:
40W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V;5.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
1.788nF
Gate Charge(Qg):
32.8nC@10V
Mfr. Part #:
SP30N04TH
Package:
TO-252-2L
Product Description
Product Overview
The SP30N04TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co., Ltd. It offers fast switching, low gate charge, and low Rdson, making it suitable for applications like DC-DC converters and load switching. This device features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP30N04TH
- Device Code: 30N04
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) Typ. | @10V | 4.2 | m | |||
| RDS(on) Typ. | @4.5V | 5.7 | m | |||
| Continuous Drain Current | ID | 80 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (TC=25) | ID | 80 | A | |||
| Continuous Drain Current (TC=100) | ID | 58 | A | |||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulse Avalanche Energy | EAS | 110 | mJ | |||
| Power Dissipation (TC=25) | PD | 40 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 4.2 | 5.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=15A | - | 5.7 | 8 | m |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 1788 | - | pF |
| Output Capacitance | Coss | - | 225 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 180 | - | pF | |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=30A | - | 32.8 | - | nC |
| Gate-Source Charge | Qgs | - | 6.3 | - | nC | |
| Gate-Drain Charge | Qgd | - | 7.8 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V, RG=3, ID=30A | - | 7 | - | nS |
| Rise Time | Tr | - | 13.5 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 33 | - | nS | |
| Fall Time | Tf | - | 11 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 26 | - | nS |
| Reverse Recovery Charge | Qrr | - | 11 | - | nC | |
| TO-252 Package Information (Dimensions in Millimeters) | TO-252 Package Information (Dimensions in Inches) | ||||||
|---|---|---|---|---|---|---|---|
| Symbol | Min. | Max. | Symbol | Min. | Max. | ||
| A | 2.200 | 2.400 | A | 0.087 | 0.094 | ||
| A1 | 0.000 | 0.127 | A1 | 0.000 | 0.005 | ||
| b | 0.660 | 0.860 | b | 0.026 | 0.034 | ||
| c | 0.460 | 0.580 | c | 0.018 | 0.023 | ||
| D | 6.500 | 6.700 | D | 0.256 | 0.264 | ||
| D1 | 5.100 | 5.460 | D1 | 0.201 | 0.215 | ||
| D2 | 4.830 REF. | D2 | 0.190 REF. | ||||
| E | 6.000 | 6.200 | E | 0.236 | 0.244 | ||
| e | 2.186 | 2.386 | e | 0.086 | 0.094 | ||
| L | 9.800 | 10.400 | L | 0.386 | 0.409 | ||
| L1 | 2.900 REF. | L1 | 0.114 REF. | ||||
| L2 | 1.400 | 1.700 | L2 | 0.055 | 0.067 | ||
| L3 | 1.600 REF. | L3 | 0.063 REF. | ||||
| L4 | 0.600 | 1.000 | L4 | 0.024 | 0.039 | ||
| 1.100 | 1.300 | 0.043 | 0.051 | ||||
| 0 | 8 | 0 | 8 | ||||
| h | 0.000 | 0.300 | h | 0.000 | 0.012 | ||
| V | 5.350 REF. | V | 0.211 REF. | ||||
2504101957_Siliup-SP30N04TH_C41354863.pdf
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