Low rds on mosfet Siliup SP60N30P8 60 volt n channel device ideal for high frequency power circuits
Key Attributes
Model Number:
SP60N30P8
Product Custom Attributes
Pd - Power Dissipation:
2.5W
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V;40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
45pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
1.18nF
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP60N30P8
Package:
SOP-8L
Product Description
Product Overview
The SP60N30P8 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N30
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) TYP | @10V | 30 | m | |||
| RDS(on) TYP | @4.5V | 40 | m | |||
| ID | 5 | A | ||||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulsed Drain Current | IDM | 20 | A | |||
| Power Dissipation | PD | 2.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 50 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=6A | - | 30 | 40 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=4A | - | 40 | 50 | m |
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 1180 | - | pF |
| Output Capacitance | Coss | - | 60 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 45 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=5A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 2.9 | - | ||
| Gate-Drain Charge | Qgd | - | 5.2 | - | ||
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V, RG=3, ID=2A | - | 5 | - | nS |
| Rise Time | Tr | - | 15 | - | ||
| Turn-Off Delay Time | Td(off) | - | 24 | - | ||
| Fall Time | Tf | - | 2.3 | - | ||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 | V |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | REF. | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60N30P8_C41354982.pdf
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