SP80N09GHNK 80V N-Channel MOSFET with Fast Switching Low Gate Charge and PDFN5X6-8L Compact Package
Key Attributes
Model Number:
SP80N09GHNK
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Output Capacitance(Coss):
332pF
Input Capacitance(Ciss):
936pF
Pd - Power Dissipation:
71.4W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
SP80N09GHNK
Package:
PDFN5X6-8L
Product Description
Product Overview
The SP80N09GHNK is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% avalanche energy tested and is suitable for power switching applications, DC-DC converters, and uninterruptible power supplies. It is supplied in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP80N09GHNK
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 80 | V | ||||
| RDS(on)TYP | @10V | 9.0 | m | |||
| ID | 60 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 80 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 60 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 40 | A | |||
| Pulse Drain Current Tested | IDM | 240 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 78 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 71.4 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.75 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 80 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 64V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9.0 | 12.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=40V, F=1MHz | - | 936 | - | pF |
| Output Capacitance | Coss | - | 332 | - | ||
| Reverse Transfer Capacitance | Crss | - | 20 | - | ||
| Total Gate Charge | Qg | VDS=40V, VGS=10V, ID=20A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4.8 | - | ||
| Gate-Drain Charge | Qgd | - | 4.4 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=40V, ID=20A, VGS=10V, RG=3 | - | 8.0 | - | nS |
| Rise Time | tr | - | 5.6 | - | ||
| Turn-Off Delay Time | td(off) | - | 14 | - | ||
| Fall Time | tf | - | 4.8 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 60 | A | |
| Reverse Recovery Time | trr | IS=20 A,di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 27.8 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2505291610_Siliup-SP80N09GHNK_C48888448.pdf
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