Complementary MOSFET Siliup SP3012CP8 30V Device for Load Switching and Power Management Applications
Key Attributes
Model Number:
SP3012CP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
9A;8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11mΩ@10V;21mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF;142pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
131pF;146pF
Input Capacitance(Ciss):
940pF;1.07nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
9.6nC@4.5V;21nC@10V
Mfr. Part #:
SP3012CP8
Package:
SOP-8L
Product Description
Product Overview
The SP3012CP8 is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP3012CP8
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Origin: Not specified
- Material: Not specified
- Color: Not specified
Technical Specifications
| Product Summary | N-Channel | P-Channel | |
| V(BR)DSS | 30V | -30V | |
| RDS(on)TYP | 11m@10V, 16m@4.5V | 21m@-10V, 30m@-4.5V | |
| ID | 9A | -8A | |
| Parameter | Symbol | Conditions | N-Channel | P-Channel | ||||
| Min. | Typ. | Max. | Min. | Typ. | Max. | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||||
| Drain-Source Voltage | VDS | 30 V | -30 V | |||||
| Gate-Source Voltage | VGS | 20 V | 20 V | |||||
| Continuous Drain Current | ID | 9 A | -8 A | |||||
| Pulsed Drain Current | IDM | 36 A | -32 A | |||||
| Single Pulse Avalanche Energy | EAS | 18 mJ | 30 mJ | |||||
| Power Dissipation | PD | 2 W | 2 W | |||||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 /W | 62.5 /W | |||||
| Storage Temperature Range | TSTG | -55 to 150 | -55 to 150 | |||||
| Operating Junction Temperature Range | TJ | -55 to 150 | -55 to 150 | |||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | - | ||
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 uA | - | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 nA | 100 nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.5 | 2.5 V | - | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 11 | 15 m | - | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 16 | 21 m | - | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - pF | - | ||
| Output Capacitance | Coss | - | 131 | - pF | - | |||
| Reverse Transfer Capacitance | Crss | - | 109 | - pF | - | |||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 9.6 | - nC | - | ||
| Gate-Source Charge | Qgs | - | 3.9 | - nC | - | |||
| Gate-Drain Charge | Qgd | - | 3.4 | - nC | - | |||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 4.2 | - nS | - | ||
| Rise Time | Tr | - | 8.2 | - nS | - | |||
| Turn-Off Delay Time | Td(off) | - | 31 | - nS | - | |||
| Fall Time | Tf | - | 4 | - nS | - | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 V | - | ||
| Maximum Body-Diode Continuous Current | IS | - | - | 9 A | - | |||
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 1.2 | - nS | - | ||
| Reverse Recovery Charge | Qrr | - | 9 | - nC | - | |||
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | - | -30 | - | - V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | - | -1 uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 nA | - | - | 100 nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | - | -1 | -1.5 | -2.5 V | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-6A | - | - | 21 | 27 m | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-4A | - | - | 30 | 40 m | ||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | - | 1070 | - pF | ||
| Output Capacitance | Coss | - | - | 146 | - pF | |||
| Reverse Transfer Capacitance | Crss | - | - | 142 | - pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | - | - | 21 | - nC | ||
| Gate-Source Charge | Qgs | - | - | 2.1 | - nC | |||
| Gate-Drain Charge | Qgd | - | - | 5.6 | - nC | |||
| Turn-On Delay Time | Td(on) | VDD=-15V VGS=-10V , RG=6, ID=-1A | - | - | 7 | - nS | ||
| Rise Time | Tr | - | - | 9 | - nS | |||
| Turn-Off Delay Time | Td(off) | - | - | 30 | - nS | |||
| Fall Time | Tf | - | - | 18 | - nS | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | - | -1.2 V | ||
| Maximum Body-Diode Continuous Current | IS | - | - | - | -8 A | |||
| Reverse Recovery Time | Trr | IS=-20A, di/dt=-100A/us, Tj=25 | - | - | 50 | - nS | ||
| Reverse Recovery Charge | Qrr | - | - | 31 | - nC | |||
| Package Information: SOP-8L | ||
| Symbol | Dimensions In Millimeters | Ref. |
| A | 1.35 - 1.75 | - |
| A1 | 0.10 - 0.25 | - |
| A2 | 1.35 - 1.55 | - |
| b | 0.33 - 0.51 | - |
| c | 0.17 - 0.25 | - |
| D | 4.80 - 5.00 | - |
| e | 1.27 | - |
| E | 5.80 - 6.20 | - |
| E1 | 3.80 - 4.00 | - |
| L | 0.40 - 1.27 | - |
| 0 - 8 | - | |
| Order Information | ||
| Device | Package | Unit/Tape |
| SP3012CP8 | SOP-8L | 4000 |
| Circuit Diagram Marking | |
| Device Code | Week Code |
| 3012C | * |
2504101957_Siliup-SP3012CP8_C22385401.pdf
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