High Current 20V P Channel MOSFET Siliup SP3415LKT2 with 2KV ESD Protection in SOT 23 Package
Key Attributes
Model Number:
SP3415LKT2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
RDS(on):
27mΩ@4.5V;36mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 P-Channel
Output Capacitance(Coss):
125pF
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP3415LKT2
Package:
SOT-23
Product Description
Product Overview
The SP3415LKT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability, a surface mount package, and ESD protection (2KV). This MOSFET is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Package: SOT-23
- ESD Protected: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | RDS(on)TYP | -4.5V | 27 | m | ||
| RDS(on) | RDS(on)TYP | -2.5V | 36 | m | ||
| Continuous Drain Current | ID | -5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | -5 | A | |||
| Pulse Drain Current | IDM | Tested | -20 | A | ||
| Power Dissipation | PD | 0.9 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 138.8 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 5 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-4A | - | 27 | 34 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID =-3A | - | 36 | 48 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | - | 550 | - | pF |
| Output Capacitance | Coss | - | 125 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 96 | - | pF | |
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-5A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 2 | - | ||
| Gate-Drain Charge | Qg d | - | 2.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 46 | - | ||
| Turn-Off Delay Time | td(off) | - | 55 | - | ||
| Turn-Off Fall Time | tf | - | 67 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP3415LKT2 | SOT-23 | 3000 | ||||
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP3415LKT2_C41354811.pdf
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