Power Management MOSFET Siliup SP30N04NJ 30V N Channel with Fast Switching and Low RDS on Resistance

Key Attributes
Model Number: SP30N04NJ
Product Custom Attributes
Pd - Power Dissipation:
28W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.2mΩ@10V;5.7mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
1.788nF
Gate Charge(Qg):
52.8nC@10V
Mfr. Part #:
SP30N04NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP30N04NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and low on-resistance, with key parameters like RDS(on)TYP at 4.2m@10V and 5.7m@4.5V. It is 100% tested for single pulse avalanche energy. This component is ideal for applications such as DC-DC converters and power management systems. It comes in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Device Code: 30N04

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on)TYP @10V 4.2 m
RDS(on)TYP RDS(on)TYP @4.5V 5.7 m
ID ID 50 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 50 A
Pulse Drain Current Tested IDM 200 A
Single Pulse Avalanche Energy EAS 110 mJ
Dissipation (Tc=25C) PD 28 W
Thermal Resistance Junction-to-Case RJC 4.4 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=20A - 4.2 5.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=15A - 5.7 8 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1788 - pF
Output Capacitance Coss - 225 - pF
Reverse Transfer Capacitance Crss - 180 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 52.8 - nC
Gate-Source Charge Qgs - 12.3 -
Gate-Drain Charge Qgd - 10.8 -
Turn-On Delay Time Td(on) VDD=20V, VGS=10V , RG=3, ID=2A - 9 - nS
Rise Time Tr - 15.5 -
Turn-Off Delay Time Td(off) - 31 -
Fall Time Tf - 9 -
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 50 A
Reverse recover time Trr IS=15A, di/dt=100A/us, Tj=25 - 26 - nS
Reverse recovery charge Qrr - 11 - nC
Package Information
Package Type PDFN3X3-8L
Dimensions (mm) Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
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2504101957_Siliup-SP30N04NJ_C41354864.pdf

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