Fast Switching Dual P Channel MOSFET Siliup SP4953ADP8 30V Low Gate Charge for Power Applications

Key Attributes
Model Number: SP4953ADP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
RDS(on):
40mΩ@10V;60mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
49pF
Number:
2 P-Channel
Output Capacitance(Coss):
65pF
Pd - Power Dissipation:
1.25W
Input Capacitance(Ciss):
495pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP4953ADP8
Package:
SOP-8L
Product Description

Product Overview

The SP4953ADP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a SOP-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 4953
  • Package: SOP-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
V(BR)DSS - - -30 - - V
RDS(on)TYP - -10V - 40 - m
RDS(on)TYP - -4.5V - 60 - m
ID - - - -5.3 - A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) - - -30 V
Gate-Source Voltage VGS (Ta=25,unless otherwise noted) - - 20 V
Continuous Drain Current ID (Ta=25,unless otherwise noted) - - -5.3 A
Pulsed Drain Current IDM (Ta=25,unless otherwise noted) - - -21.2 A
Power Dissipation PD (Ta=25,unless otherwise noted) - - 1.25 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25,unless otherwise noted) - 100 - /W
Storage Temperature Range TSTG (Ta=25,unless otherwise noted) -55 - 150
Operating Junction Temperature Range TJ (Ta=25,unless otherwise noted) -55 - 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -30 - - V
Drain-Source Leakage Current IDSS VDS=-24V , VGS=0V - - -1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=-10V , ID=-4.1A - 40 55 m
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-3.0A - 60 85 m
Dynamic Characteristics
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 495 - pF
Output Capacitance Coss - - 65 - pF
Reverse Transfer Capacitance Crss - - 49 - pF
Total Gate Charge Qg VDS=-15V , VGS=-10V , ID=-5A - 9 - nC
Gate-Source Charge Qgs - - 1.6 - -
Gate-Drain Charge Qgd - - 2.4 - -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=-15V, VGS=-10V , RG=3, ID=-1A - 8 - nS
Rise Time Tr - - 5 - -
Turn-Off Delay Time Td(off) - - 27 - -
Fall Time Tf - - 12 - -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=-1A - - -1.2 V
Maximum Body-Diode Continuous Current IS - - - -5.3 A
Reverse recover time Trr IS=-5A, di/dt=100A/us, TJ=25 - 29 - nS
Reverse recovery charge Qrr - - 11 - nC
Package Information (SOP-8L)
Symbol Dimensions In Millimeters Min. Max. - - -
A - 1.35 1.75 - - -
A1 - 0.10 0.25 - - -
A2 - 1.35 1.55 - - -
b - 0.33 0.51 - - -
c - 0.17 0.25 - - -
D - 4.80 5.00 - - -
e - 1.27 REF. - - - -
E - 5.80 6.20 - - -
E1 - 3.80 4.00 - - -
L - 0.40 1.27 - - -
- 0 8 - - -

2504101957_Siliup-SP4953ADP8_C41355087.pdf

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