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quality High gain low voltage PNP planar transistor SINO-IC SEBT818BA designed for power management in devices factory
quality High gain low voltage PNP planar transistor SINO-IC SEBT818BA designed for power management in devices factory

High gain low voltage PNP planar transistor SINO-IC SEBT818BA designed for power management in devices

Key Attributes
Model Number: SEBT818BA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
20uA
DC Current Gain:
100@500mA,1V
Transition Frequency(fT):
-
Number:
1 PNP
Vce Saturation(VCE(sat)):
210mV
Type:
PNP
Pd - Power Dissipation:
1.2W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
SEBT818BA
Package:
SOT-23-6L
Product Description

Product Overview

The SEBT818BA is a high-gain, low-voltage PNP planar power transistor manufactured by Shanghai Sino-IC Microelectronics Co., Ltd. Utilizing a "Base Island" layout, this transistor offers exceptional high gain performance combined with a very low saturation voltage. It is designed for power management in portable equipment and switching regulators in battery charger applications.

Product Attributes

  • Brand: SINO-IC
  • Origin: China
  • Technology: Low Voltage PNP Planar Technology
  • Layout: "Base Island"
  • Package: SOT23-5L (Surface-mounting, Tape & Reel)

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Collector-Base Voltage (IE = 0) VCBO -30 V
Collector-Emitter Voltage (IB = 0) VCEO -30 V
Emitter-Base Voltage (IC = 0) VEBO -5 V
Collector Current IC -3 A
Collector Peak Current ICM -6 A
Base Current IB -0.2 A
Base Peak Current IBM -0.5 A
Total Dissipation at TC = 25 C Ptot 1.2 W
Storage Temperature Tstg -65 150 C
Max. Operating Junction Temperature Tj 150 C
Thermal Data
Thermal Resistance Junction-ambient Rthj-amb (1) 104.2 C/W
Electrical Characteristics
Collector Cut-off Current (IE = 0) ICBO VCB = -30 V -0.1 A
Collector Cut-off Current (IE = 0) ICBO VCB = -30 V, TC = 125 C -20 A
Emitter Cut-off Current (IC = 0) IEBO VEB = -5 V -0.1 A
Collector-Emitter Breakdown Voltage (IB = 0) V(BR)CEO* IC = -10 mA -30 V
Collector-Emitter Saturation Voltage VCE(sat)* IC = -0.5 A, IB = -5 mA -0.075 -0.21 V
Collector-Emitter Saturation Voltage VCE(sat)* IC = -2 A, IB = -20 mA -0.15 -0.5 V
Collector-Emitter Saturation Voltage VCE(sat)* IC = -1.2 A, IB = -20 mA -0.25 V
Base-Emitter Saturation Voltage VBE(sat)* IC = -0.5 A, IB = -5 mA -0.74 -1.1 V
Base-Emitter Saturation Voltage VBE(sat)* IC = -1.2 A, IB = -20 mA -1.1 -1.2 V
Base-Emitter Saturation Voltage VBE(sat)* IC = -2 A, IB = -20 mA -1.2 V
Base-Emitter Voltage VBE(ON)* IC = -0.5 A, VCE = -2 V -0.71 -1.1 V
DC Current Gain hFE* IC = -0.5 A, VCE = -1 V 100
DC Current Gain hFE* IC = -2.5 A, VCE = -3 V 100

2410121341_SINO-IC-SEBT818BA_C393134.pdf

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