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quality 60V N Channel MOSFET Siliup SP60N03GTH with Low Gate Charge and Tested Single Pulse Avalanche Energy factory
quality 60V N Channel MOSFET Siliup SP60N03GTH with Low Gate Charge and Tested Single Pulse Avalanche Energy factory

60V N Channel MOSFET Siliup SP60N03GTH with Low Gate Charge and Tested Single Pulse Avalanche Energy

Key Attributes
Model Number: SP60N03GTH
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V;4.6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
975pF
Input Capacitance(Ciss):
4.25nF
Pd - Power Dissipation:
110W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP60N03GTH
Package:
TO-252
Product Description

Product Overview

The SP60N03GTH is a 60V N-Channel Power MOSFET designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N03GTH
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage V(BR)DSS - - - 60 V
Drain-Source On-state Resistance RDS(on) @10V - 3.7 4.7 m
Drain-Source On-state Resistance RDS(on) @4.5V - 4.6 6.2 m
Continuous Drain Current ID (Tc=25C) - - 110 A
Continuous Drain Current ID (Tc=100C) - - 75 A
Pulse Drain Current IDM Tested - - 440 A
Single Pulse Avalanche Energy EAS 1 - - 441 mJ
Power Dissipation PD (Tc=25C) - - 110 W
Thermal Resistance Junction-to-Case RJC - - 1.14 - C/W
Maximum Junction Temperature TJ - -55 - 150 C
Storage Temperature Range TSTG - -55 - 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.7 2.5 V
Input Capacitance Ciss VGS=0V, VDS=30V,F=1MHz - 4250 - pF
Output Capacitance Coss - - 975 - pF
Reverse Transfer Capacitance Crss - - 41 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 42 - nC
Gate-Source Charge Qgs - - 12 - nC
Gate-Drain Charge Qg d - - 10 - nC
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=3 - 13.5 - nS
Rise Time tr - - 96 - nS
Turn-Off Delay Time td(off) - - 40 - nS
Fall Time tf - - 115 - nS
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - - 110 A
Reverse Recovery Time Trr IS=50 A,di/dt=100 A/sTJ=25 - 35 - nS
Reverse Recovery Charge Qrr - - 30 - nC
Package Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.) Dimensions In Inches (Min.) Dimensions In Inches (Max.)
TO-252 A: 2.200, A1: 0.000, b: 0.660, c: 0.460, D: 6.500, D1: 5.100, E: 6.000, e: 2.186, L: 9.800, L1: 2.900 REF., L2: 1.400, L3: 1.600 REF., L4: 0.600, : 1.100, : 0, h: 0.000, V: 5.350 REF. A: 2.400, A1: 0.127, b: 0.860, c: 0.580, D: 6.700, D1: 5.460, E: 6.200, e: 2.386, L: 10.400, L2: 1.700, L4: 1.000, : 1.300, : 8, h: 0.300 A: 0.087, A1: 0.000, b: 0.026, c: 0.018, D: 0.256, D1: 0.201, E: 0.236, e: 0.086, L: 0.386, L1: 0.114 REF., L2: 0.055, L3: 0.063 REF., L4: 0.024, : 0.043, : 0, h: 0.000, V: 0.211 REF. A: 0.094, A1: 0.005, b: 0.034, c: 0.023, D: 0.264, D1: 0.215, E: 0.244, e: 0.094, L: 0.409, L2: 0.067, L4: 0.039, : 0.051, : 8, h: 0.012

Circuit Diagram: 1:G 2:D 3:S

Marking: SP60N03GTH

Order Information:

  • Device: SP60N03GTH
  • Package: TO-252
  • Unit/Tape: 2500

2504101957_Siliup-SP60N03GTH_C22385378.pdf

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