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quality Fast Switching P Channel MOSFET Siliup SP1613NJ 16V for Power Management and DC DC Converter Circuits factory
quality Fast Switching P Channel MOSFET Siliup SP1613NJ 16V for Power Management and DC DC Converter Circuits factory

Fast Switching P Channel MOSFET Siliup SP1613NJ 16V for Power Management and DC DC Converter Circuits

Key Attributes
Model Number: SP1613NJ
Product Custom Attributes
Drain To Source Voltage:
16V
Current - Continuous Drain(Id):
20A
RDS(on):
13mΩ@4.5V;16mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
362pF
Number:
1 P-Channel
Output Capacitance(Coss):
411pF
Pd - Power Dissipation:
23W
Input Capacitance(Ciss):
2.05nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP1613NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP1613NJ is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficiency and performance, this MOSFET features fast switching speeds and low on-resistance, making it ideal for power management applications. It is 100% tested for single pulse avalanche energy, ensuring reliability. Key applications include DC-DC converters and power management systems.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: P-Channel MOSFET
  • Model: SP1613NJ
  • Package: PDFN3X3-8L
  • Device Code: Q1613

Technical Specifications

Parameter Symbol Conditions Rating Unit
Product Summary
Drain-Source Voltage V(BR)DSS -16 V
On-Resistance (Typ.) RDS(on)TYP @-4.5V 13 m
On-Resistance (Typ.) RDS(on)TYP @-2.5V 16 m
Continuous Drain Current ID -20 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDSS -16 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current (Tc=25C) ID -20 A
Continuous Drain Current (Tc=100C) ID -13 A
Pulse Drain Current Tested IDM -80 A
Single Pulse Avalanche Energy EAS 39 mJ
Power Dissipation (Tc=25C) PD 23 W
Thermal Resistance Junction-to-Case RJC 5.4 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=-250uA -16 V
Drain-Source Leakage Current IDSS VDS=-12V , VGS=0V , TJ=25 -1 uA
Gate-Source Leakage Current IGSS VGS=12V , VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -0.4 to -1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=-4.5V , ID=-5A 13 to 18 m
Static Drain-Source On-Resistance RDS(ON) VGS=-2.5V , ID=-4A 16 to 22 m
Input Capacitance Ciss VDS=-10V , VGS=0V , f=1MHz 2050 pF
Output Capacitance Coss 411 pF
Reverse Transfer Capacitance Crss 362 pF
Total Gate Charge Qg VDS=-16V , VGS=-10V , ID=-10A 30 nC
Gate-Source Charge Qgs 5.3
Gate-Drain Charge Qg d 7.6
Turn-On Delay Time Td(on) VDD=-16V, VGS=-10V ,RG=3, ID=-6A 14 nS
Rise Time Tr 20 nS
Turn-Off Delay Time Td(off) 95 nS
Fall Time Tf 65 nS
Diode Forward Voltage VSD VGS=0V , IS=-1A , TJ=25 -1.2 V
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 ~ 0.05 0 ~ 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 ~ 0.100 0 ~ 0.004
L3 0 ~ 0.100 0 ~ 0.004
H 0.315 - 0.515 0.012 - 0.020
9 - 13 9 - 13

2504101957_Siliup-SP1613NJ_C41354997.pdf

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