power switching MOSFET Siliup SP60N03HTQ N Channel 60V device suitable for DC DC converters and power control
Key Attributes
Model Number:
SP60N03HTQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
RDS(on):
3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
433pF
Number:
-
Output Capacitance(Coss):
587pF
Input Capacitance(Ciss):
7.52nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
154nC@10V
Mfr. Part #:
SP60N03HTQ
Package:
TO-220
Product Description
Product Overview
The SP60N03HTQ is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for power switching applications, DC-DC converters, and power management systems. It features fast switching, low gate charge, and low RDS(on) with a typical value of 3m at 10V. The MOSFET is 100% tested for single pulse avalanche energy, ensuring reliability in demanding applications. It is supplied in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N03HTQ
- Channel Type: N-Channel
- Package: TO-220-3L (Pinout: 1:G, 2:D, 3:S)
- Marking: 60N03H (Product code), *: Week code
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 3 | m | ||
| Continuous Drain Current | ID | 130 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 130 | A | |||
| Continuous Drain Current (Tc=100) | ID | 87 | A | |||
| Pulsed Drain Current | IDM | 520 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 756 | mJ | |||
| Power Dissipation (Tc=25) | PD | 220 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.57 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Drain Cut-Off Current | IDSS | VDS=48V, VGS=0V, TJ=25 | 1 | A | ||
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=75A | 3 | 3.8 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | 7520 | pF | ||
| Output Capacitance | Coss | 587 | pF | |||
| Reverse Transfer Capacitance | Crss | 433 | pF | |||
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=75A | 154 | nC | ||
| Gate-Source Charge | Qgs | 38 | nC | |||
| Gate-Drain Charge | Qg d | 51 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V, RG=3, ID=20A | 25 | nS | ||
| Rise Time | tr | 23 | nS | |||
| Turn-Off Delay Time | td(off) | 90 | nS | |||
| Fall Time | tf | 38 | nS | |||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 130 | A | |||
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | 51 | nS | ||
| Reverse Recovery Charge | Qrr | 76 | nC | |||
| Note: 1The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25 | ||||||
| Package Information: TO-220-3L | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
2504101957_Siliup-SP60N03HTQ_C41355055.pdf
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