High Current 40 Amp 30 Volt MOSFET Siliup SP30N07TH in TO 252 2L Package for Power Management Circuits

Key Attributes
Model Number: SP30N07TH
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Output Capacitance(Coss):
145pF
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
22nC@10V
Mfr. Part #:
SP30N07TH
Package:
TO-252-2L
Product Description

Product Overview

The SP30N07TH is a 30V N-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications. Key applications include PWM applications, load switching, and power management. The MOSFET offers a high current rating and is available in a TO-252-2L package.

Product Attributes

  • Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
  • Product Code: 30N07
  • Package: TO-252-2L
  • Material: Lead free product

Technical Specifications

Parameter Symbol Conditions Min Typ Max Unit
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
RDS(on) RDS(on)TYP @10V 7.5 m
RDS(on) RDS(on)TYP @4.5V 10.5 m
Current ID 40 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS (VGS=0V 30 V
Gate-Source Voltage VGS (VDS=0V) 20 V
Drain Current-Continuous ID (Tc=25) 40 A
Drain Current-Continuous ID (Tc=100) 28 A
Drain Current-Continuous@ Current-Pulsed IDM (pluse) 160 A
Maximum Power Dissipation PD (Tc=25) 50 W
Maximum Power Dissipation PD (Tc=100) 25 W
Avalanche energy EAS 90 mJ
Thermal Resistance,Junction-to-Case RJc 3 /W
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175
Electrical Characteristics (Ta=25, unless otherwise noted)
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=250A 1 1.5 2.5 V
Forward Transconductance gFS VDS=5V,ID=20A 10 20 S
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=20A 7.5 10 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=15A 10.5 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V,VGS=0V, f=1.0MHz 1050 pF
Output Capacitance Coss 145 pF
Reverse Transfer Capacitance Crss 120 pF
Gate resistance Rg VGS=0V, VDS=0V,f=1.0MHz 2
Switching Times
Turn-on Delay Time td(on) VGS=10V, VDS=15V, RL=0.75W,RGEN=3W 7 nS
Turn-on Rise Time tr 22 nS
Turn-Off Delay Time td(off) 30 nS
Turn-Off Fall Time tf 5 nS
Total Gate Charge Qg VGS=10V, VDS=25V, ID=12A 22 nC
Gate-Source Charge Qgs 4 nC
Gate-Drain Charge Qg d 7 nC
Source-Drain Diode Characteristics
Gate-Drain Charge VSD VGS=0V,IS=20A 1.2 V
TO-252-2L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2410311049_Siliup-SP30N07TH_C42372333.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.