High Current 40 Amp 30 Volt MOSFET Siliup SP30N07TH in TO 252 2L Package for Power Management Circuits
Product Overview
The SP30N07TH is a 30V N-Channel MOSFET designed for high power and current handling capabilities. It is a lead-free product suitable for surface mount applications. Key applications include PWM applications, load switching, and power management. The MOSFET offers a high current rating and is available in a TO-252-2L package.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: 30N07
- Package: TO-252-2L
- Material: Lead free product
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | RDS(on)TYP | @10V | 7.5 | m | ||
| RDS(on) | RDS(on)TYP | @4.5V | 10.5 | m | ||
| Current | ID | 40 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | (VGS=0V | 30 | V | ||
| Gate-Source Voltage | VGS | (VDS=0V) | 20 | V | ||
| Drain Current-Continuous | ID | (Tc=25) | 40 | A | ||
| Drain Current-Continuous | ID | (Tc=100) | 28 | A | ||
| Drain Current-Continuous@ Current-Pulsed | IDM (pluse) | 160 | A | |||
| Maximum Power Dissipation | PD | (Tc=25) | 50 | W | ||
| Maximum Power Dissipation | PD | (Tc=100) | 25 | W | ||
| Avalanche energy | EAS | 90 | mJ | |||
| Thermal Resistance,Junction-to-Case | RJc | 3 | /W | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1 | 1.5 | 2.5 | V |
| Forward Transconductance | gFS | VDS=5V,ID=20A | 10 | 20 | S | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | 7.5 | 10 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=15A | 10.5 | 15 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V, f=1.0MHz | 1050 | pF | ||
| Output Capacitance | Coss | 145 | pF | |||
| Reverse Transfer Capacitance | Crss | 120 | pF | |||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 2 | |||
| Switching Times | ||||||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=15V, RL=0.75W,RGEN=3W | 7 | nS | ||
| Turn-on Rise Time | tr | 22 | nS | |||
| Turn-Off Delay Time | td(off) | 30 | nS | |||
| Turn-Off Fall Time | tf | 5 | nS | |||
| Total Gate Charge | Qg | VGS=10V, VDS=25V, ID=12A | 22 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg d | 7 | nC | |||
| Source-Drain Diode Characteristics | ||||||
| Gate-Drain Charge | VSD | VGS=0V,IS=20A | 1.2 | V | ||
| TO-252-2L Package Information | ||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2410311049_Siliup-SP30N07TH_C42372333.pdf
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