High Current Capacity 30V N Channel MOSFET Siliup SP30N10NJ with Fast Switching and Low On Resistance
Key Attributes
Model Number:
SP30N10NJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
14A
RDS(on):
10mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 N-channel
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
16W
Input Capacitance(Ciss):
940pF
Gate Charge(Qg):
9.6nC@4.5V
Mfr. Part #:
SP30N10NJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP30N10NJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds, low on-resistance (10m@10V, 14m@4.5V), and 100% single pulse avalanche energy testing. This MOSFET is ideal for DC-DC converters and power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30N10NJ
- Device Code: 30N10
- Channel Type: N-Channel
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 14 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 9.3 | A | |||
| Pulse Drain Current | IDM | Tested | 64 | A | ||
| Single Pulse Avalanche Energy | EAS | 46 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 16 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 7.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=15A | - | 10 | 14 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 14 | 28 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 940 | - | pF |
| Output Capacitance | Coss | - | 131 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 109 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 9.6 | - | nC |
| Gate-Source Charge | Qgs | - | 3.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 3.4 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 4.2 | - | nS |
| Rise Time | tr | - | 8.2 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 31 | - | nS | |
| Fall Time | tf | - | 4 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 14 | A | |
| Reverse recover time | trr | IS=10A, di/dt=100A/us, TJ=25 | - | 1.2 | - | nS |
| Reverse recovery charge | Qrr | - | 9 | - | nC |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | ||
| L3 | 0~0.100 | 0~0.004 | ||
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
2504101957_Siliup-SP30N10NJ_C41354875.pdf
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