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quality Durable 300V MOSFET Siliup SP16MF30TO Featuring Low Gate Charge and High Pulsed Drain Current for PWM factory
quality Durable 300V MOSFET Siliup SP16MF30TO Featuring Low Gate Charge and High Pulsed Drain Current for PWM factory
quality Durable 300V MOSFET Siliup SP16MF30TO Featuring Low Gate Charge and High Pulsed Drain Current for PWM factory
quality Durable 300V MOSFET Siliup SP16MF30TO Featuring Low Gate Charge and High Pulsed Drain Current for PWM factory

Durable 300V MOSFET Siliup SP16MF30TO Featuring Low Gate Charge and High Pulsed Drain Current for PWM

Key Attributes
Model Number: SP16MF30TO
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
130A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.6pF
Number:
1 N-channel
Output Capacitance(Coss):
824pF
Input Capacitance(Ciss):
5.408nF
Pd - Power Dissipation:
289W
Gate Charge(Qg):
83nC@10V
Mfr. Part #:
SP16MF30TO
Package:
TOLL-8L
Product Description

Product Overview

The SP16MF30TO is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management systems. The device is 100% tested for single pulse avalanche energy.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP16MF30TO
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Rating Units
Drain-Source Voltage VDS 300 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current (Tc=25) ID 130 A
Continuous Drain Current (Tc=100) ID 87 A
Pulsed Drain Current IDM 520 A
Single Pulse Avalanche Energy EAS 1264 mJ
Power Dissipation (Tc=25) PD 289 W
Thermal Resistance Junction-to-Case RθJC 0.43 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 300 V
Drain-Source Leakage Current IDSS VDS =240V, VGS = 0V - 1 µA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V - ±100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3 4-5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 35A - 16-20 mΩ
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 5408 pF
Output Capacitance Coss - 824 pF
Reverse Transfer Capacitance Crss - 2.6 pF
Total Gate Charge Qg VDS=100V , VGS=10V , ID=40A - 83 nC
Gate-Source Charge Qgs - 25 nC
Gate-Drain Charge Qgd - 29 nC
Turn-On Delay Time Td(on) VGS = 10V, VDS = 100V, ID=40A , RG = 20Ω - 23 nS
Rise Time Tr - 25 nS
Turn-Off Delay Time Td(off) - 88 nS
Fall Time Tf - 13 nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - 1.2 V
Maximum Body-Diode Continuous Current IS - 130 A
Reverse Recovery Time trr IS=40A,di/dt=100A/us, Tj=25 - 112 nS
Reverse Recovery Charge Qrr - 0.92 µC

TOLL Package Information

Symbol Dimensions (Millimeters)
A 2.20 - 2.40
b 0.65 - 0.85
C 0.508 REF
D 10.25 - 10.55
D1 2.85 - 3.15
E 9.75 - 10.05
E1 9.65 - 9.95
E2 8.95 - 9.25
E3 7.25 - 7.55
e 1.20 BSC
F 1.05 - 1.35
H 11.55 - 11.85
H1 6.03 - 6.33
H2 6.85 - 7.15
H3 3.00 BSC
L 1.55 - 1.85
L1 0.55 - 0.85
L2 0.45 - 0.75
M 0.08 REF.
β 8° - 12°
K 4.25 - 4.55

Order Information

Device Package Unit/Tape
SP16MF30TO TOLL 2000

2508111740_Siliup-SP16MF30TO_C50199166.pdf

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