Siliup SP2006KT2 20V P Channel MOSFET Featuring 2KV ESD Protection for Battery Switch and Power Conversion
Key Attributes
Model Number:
SP2006KT2
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
660mA
RDS(on):
650mΩ@4.5V;850mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
75pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SP2006KT2
Package:
SOT-23
Product Description
Product Overview
The SP2006KT2 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is suitable for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2006KT2
- Package: SOT-23
- Circuit Diagram Marking: 06K
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| RDS(on) | @-4.5V | 650 | m | |||
| @-2.5V | 850 | m | ||||
| Continuous Drain Current | ID | -0.66 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -0.66 | A | |||
| Pulse Drain Current | IDM | Tested | -2.64 | A | ||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 357 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.35 | -0.65 | -1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-500mA | 650 | 750 | m | |
| VGS=-2.5V , ID=-200mA | 850 | 1000 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 75 | pF | ||
| Output Capacitance | Coss | 20 | pF | |||
| Reverse Transfer Capacitance | Crss | 14 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-0.5A | 1.25 | nC | ||
| Gate-Source Charge | Qgs | 0.35 | ||||
| Gate-Drain Charge | Qgd | 0.27 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS | ||
| Turn-On Rise Time | tr | 19 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 24 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP2006KT2 | SOT-23 | 3000 | ||||
2504101957_Siliup-SP2006KT2_C41355139.pdf
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