power switching with Siliup SP60N03GNK 60V N Channel Power MOSFET featuring low on state resistance

Key Attributes
Model Number: SP60N03GNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
100A
RDS(on):
2.6mΩ@10V;3.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Output Capacitance(Coss):
975pF
Pd - Power Dissipation:
105W
Input Capacitance(Ciss):
4.25nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP60N03GNK
Package:
PDFN-8L(5x6)
Product Description

Siliup Semiconductor SP60N03GNK 60V N-Channel Power MOSFET

The SP60N03GNK is a 60V N-Channel Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low gate charge, and a low on-state resistance (RDS(on)) thanks to its advanced split gate trench technology. This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It undergoes 100% single pulse avalanche energy testing for reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N03GNK
  • Device Code: 60N03G
  • Channel Type: N-Channel
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage V(BR)DSS 60 V
RDS(on) Typ RDS(on) 10V 2.6 m
RDS(on) Typ RDS(on) 4.5V 3.5 m
Continuous Drain Current ID Tc=25C 100 A
Continuous Drain Current ID Tc=100C 67 A
Pulse Drain Current IDM Tested 400 A
Single Pulse Avalanche Energy EAS 1 506 mJ
Power Dissipation PD Tc=25C 105 W
Thermal Resistance Junction-to-Case RJC 1.19 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.7 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A - 2.6 3.2 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=10A - 3.5 4.3 m
Input Capacitance Ciss VGS=0V, VDS=30V,F=1MHz - 4250 - pF
Output Capacitance Coss - 975 - pF
Reverse Transfer Capacitance Crss - 41 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 42 - nC
Gate-Source Charge Qgs - 12 - nC
Gate-Drain Charge Qg d - 10 - nC
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=3 - 13.5 - nS
Rise Time tr - 96 - nS
Turn-Off Delay Time td(off) - 40 - nS
Fall Time tf - 115 - nS
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 100 A
Reverse Recovery Time Trr IS=50 A,di/dt=100 A/sTJ=25 - 35 - nS
Reverse Recovery Charge Qrr - 30 - nC

Package Dimensions (PDFN5X6-8L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

Order Information

Device Package Unit/Tape
SP60N03GNK PDFN5X6-8L 5000

2504101957_Siliup-SP60N03GNK_C22466765.pdf

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