power switching with Siliup SP60N03GNK 60V N Channel Power MOSFET featuring low on state resistance
Siliup Semiconductor SP60N03GNK 60V N-Channel Power MOSFET
The SP60N03GNK is a 60V N-Channel Power MOSFET designed for efficient power switching applications. It features fast switching speeds, low gate charge, and a low on-state resistance (RDS(on)) thanks to its advanced split gate trench technology. This MOSFET is suitable for hard-switched and high-frequency circuits, as well as uninterruptible power supply systems. It undergoes 100% single pulse avalanche energy testing for reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N03GNK
- Device Code: 60N03G
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| RDS(on) Typ | RDS(on) | 10V | 2.6 | m | ||
| RDS(on) Typ | RDS(on) | 4.5V | 3.5 | m | ||
| Continuous Drain Current | ID | Tc=25C | 100 | A | ||
| Continuous Drain Current | ID | Tc=100C | 67 | A | ||
| Pulse Drain Current | IDM | Tested | 400 | A | ||
| Single Pulse Avalanche Energy | EAS | 1 | 506 | mJ | ||
| Power Dissipation | PD | Tc=25C | 105 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.19 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 1.7 | 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 2.6 | 3.2 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 3.5 | 4.3 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V,F=1MHz | - | 4250 | - | pF |
| Output Capacitance | Coss | - | 975 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 41 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qg d | - | 10 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=3 | - | 13.5 | - | nS |
| Rise Time | tr | - | 96 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 40 | - | nS | |
| Fall Time | tf | - | 115 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 100 | A | |
| Reverse Recovery Time | Trr | IS=50 A,di/dt=100 A/sTJ=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | 30 | - | nC |
Package Dimensions (PDFN5X6-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 | 12 | 10 | 12 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP60N03GNK | PDFN5X6-8L | 5000 |
2504101957_Siliup-SP60N03GNK_C22466765.pdf
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