150V N Channel MOSFET Siliup SP015N06GHTF Featuring Split Gate Trench Technology and Low Gate Charge
Key Attributes
Model Number:
SP015N06GHTF
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
155A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
5.24nF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP015N06GHTF
Package:
TO-247
Product Description
Product Overview
The SP015N06GHTF is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N06GH
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on)TYP | @10V | 6 | m | |||
| ID | 155 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 155 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 100 | A | ||
| Pulsed Drain Current | IDM | 620 | A | |||
| Single Pulse Avalanche Energy | EAS | 812 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 320 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 6 | 7.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5240 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qg d | - | 20 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 70A, RG = 6 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 155 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | 98 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | 217 | nC | |||
| TO-247 Package Information (Dimensions in Millimeters) | ||||||
| Symbol | Min. | Max. | Symbol | Min. | Max. | |
| A | 4.850 | 5.150 | A1 | 2.200 | 2.600 | |
| b | 1.000 | 1.400 | b1 | 2.800 | 3.200 | |
| b2 | 1.800 | 2.200 | c | 0.500 | 0.700 | |
| c1 | 1.900 | 2.100 | D | 15.450 | 15.750 | |
| E1 | 3.500 REF. | E2 | 3.600 REF. | |||
| L | 40.900 | 41.300 | L1 | 24.800 | 25.100 | |
| L2 | 20.300 | 20.600 | 7.100 | 7.300 | ||
| e | 5.450 TYP. | H | 5.980 REF. | |||
| h | 0.000 | 0.300 | ||||
2504101957_Siliup-SP015N06GHTF_C22385386.pdf
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