40V N Channel Power MOSFET Siliup SP40N02AGTH Featuring Split Gate Trench Technology and TO 252 Package
Key Attributes
Model Number:
SP40N02AGTH
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Output Capacitance(Coss):
1.208nF
Pd - Power Dissipation:
138W
Input Capacitance(Ciss):
3.485nF
Gate Charge(Qg):
57nC@10V
Mfr. Part #:
SP40N02AGTH
Package:
TO-252
Product Description
Product Overview
The SP40N02AGTH is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, PWM applications, and DC-DC converters. It is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40N02AG
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 40 | V |
| RDS(on) | - | @10V | - | 1.9 | 2.5 | m |
| RDS(on) | - | @4.5V | - | 3 | 4 | m |
| ID | - | - | - | - | 130 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 40 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 130 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 85 | A |
| Pulsed Drain Current | IDM | - | - | - | 520 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 506 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 125 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | - | 1 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=10V , ID=20A | - | 1.9 | 2.5 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS=4.5V , ID=10A | - | 3 | 4 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 3485 | - | pF |
| Output Capacitance | Coss | - | - | 1208 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 59 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=85A | - | 57 | - | nC |
| Gate-Source Charge | Qgs | - | - | 9.5 | - | - |
| Gate-Drain Charge | Qgd | - | - | 11 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20V, VGS=10V, RG=1.6, ID=85A | - | 10 | - | nS |
| Rise Time | tr | - | - | 3 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 35 | - | - |
| Fall Time | tf | - | - | 4 | - | - |
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 130 | A |
| Reverse Recovery Time | Trr | IS=40A, di/dt=100A/us, TJ=25 | - | 42 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 37 | - | nC |
| TO-252 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP40N02AGTH_C42403236.pdf
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