Power switching MOSFET Siliup SP3070TH 30V N Channel device tested for single pulse avalanche energy

Key Attributes
Model Number: SP3070TH
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@10V;6mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
163pF
Number:
1 N-channel
Output Capacitance(Coss):
194pF
Input Capacitance(Ciss):
1.612nF
Pd - Power Dissipation:
36W
Gate Charge(Qg):
33.1nC@10V
Mfr. Part #:
SP3070TH
Package:
TO-252-2L
Product Description

Product Overview

The SP3070TH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching capabilities, low gate charge, and low RDS(on) for optimal performance. The device is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters and load switching.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP3070TH
  • Device Code: 3070
  • Channel Type: N-Channel
  • Package: TO-252

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS 30 V
RDS(on) Typ. RDS(on) @10V 4.5 m
RDS(on) Typ. RDS(on) @4.5V 6.0 m
Continuous Drain Current ID 70 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS -20 20 V
Continuous Drain Current (TC=25) ID 70 A
Continuous Drain Current (TC=100) ID 47 A
Pulsed Drain Current IDM 280 A
Single Pulse Avalanche Energy EAS 132 mJ
Power Dissipation (TC=25) PD 36 W
Thermal Resistance Junction-to-Case RJC 1.7 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 4.5 6.3 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=15A - 6.0 9.0 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1612 - pF
Output Capacitance Coss - 194 - pF
Reverse Transfer Capacitance Crss - 163 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 33.1 - nC
Gate-Source Charge Qgs - 5.5 - nC
Gate-Drain Charge Qgd - 6.8 - nC
Turn-On Delay Time Td(on) VDD=15V, VGS=4.5V , RG=6, ID=15A - 6.7 - nS
Rise Time Tr - 14.5 - nS
Turn-Off Delay Time Td(off) - 32 - nS
Fall Time Tf - 8.2 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 70 A
Reverse Recovery Time Trr IS=30A, di/dt=100A/us, TJ=25 - 32 - nS
Reverse Recovery Charge Qrr - 12 - nC
TO-252 Package Information (Dimensions in Millimeters)
Symbol Min. Max. Note
A 2.200 2.400
A1 0.000 0.127
b 0.660 0.860
c 0.460 0.580
D 6.500 6.700
D1 5.100 5.460
D2 4.830 REF.
E 6.000 6.200
e 2.186 2.386
L 9.800 10.400
L1 2.900 REF.
L2 1.400 1.700
L3 1.600 REF.
L4 0.600 1.000
1.100 1.300
0 8
h 0.000 0.300
V 5.350 REF.
TO-252 Package Information (Dimensions in Inches)
Symbol Min. Max. Note
A 0.087 0.094
A1 0.000 0.005
b 0.026 0.034
c 0.018 0.023
D 0.256 0.264
D1 0.201 0.215
D2 0.190 REF.
E 0.236 0.244
e 0.086 0.094
L 0.386 0.409
L1 0.114 REF.
L2 0.055 0.067
L3 0.063 REF.
L4 0.024 0.039
0.043 0.051
0 8
h 0.000 0.012
V 0.211 REF.

2504101957_Siliup-SP3070TH_C41354866.pdf

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