Complementary MOSFET Siliup SP1012ACP8 100V SOP8L Package Lead Free Single Pulse Avalanche Tested
Key Attributes
Model Number:
SP1012ACP8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
3.5A;2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V;230mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF;18pF
Number:
-
Output Capacitance(Coss):
23pF;30pF
Input Capacitance(Ciss):
792pF;721pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13.6nC@10V;16nC@10V
Mfr. Part #:
SP1012ACP8
Package:
SOP-8L
Product Description
Product Overview
The SP1012ACP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This lead-free product is available in a surface mount SOP-8L package and undergoes 100% single pulse avalanche energy testing. It is ideal for applications such as battery protection, load switching, and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: SOP-8L
- Certifications: Lead free product is acquired
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=2A | - | 90 | 110 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=1A | - | 100 | 120 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 792 | - | pF |
| Output Capacitance | Coss | - | - | 23 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 19 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=3A | - | 13.6 | - | nC |
| Gate-Source Charge | Qgs | - | - | 2.1 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 1.9 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V , RG=3, ID=3A | - | 7 | - | nS |
| Rise Time | Tr | - | - | 1.5 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 15.3 | - | nS |
| Fall Time | Tf | - | - | 2 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 3.5 | A |
| Reverse Recovery Time | Trr | IS=3A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 23 | - | nC |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-80V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.8 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-2A | - | 230 | 290 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-1A | - | 240 | 320 | m |
| Input Capacitance | Ciss | VDS=-50V , VGS=0V , f=1MHz | - | 721 | - | pF |
| Output Capacitance | Coss | - | - | 30 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 18 | - | pF |
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=-2A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | - | 3 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 2.5 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=-50V VGS=-10V , RG=3, ID=-2A | - | 9 | - | nS |
| Rise Time | Tr | - | - | 6.5 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 28 | - | nS |
| Fall Time | Tf | - | - | 7.5 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | -2.5 | A |
| Reverse Recovery Time | Trr | IS=-2.5A, di/dt=-100A/us, Tj=25 | - | 35 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 45 | - | nC |
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | - | 100 (N-Ch) / -100 (P-Ch) | - | - | V |
| Gate-Source Voltage | VGS | - | 20 (N-Ch) / 20 (P-Ch) | - | - | V |
| Continuous Drain Current | ID | - | 3.5 (N-Ch) / -2.5 (P-Ch) | - | - | A |
| Pulsed Drain Current | IDM | - | 14 (N-Ch) / -10 (P-Ch) | - | - | A |
| Single Pulse Avalanche Energy | EAS | - | 6 (N-Ch) / 12 (P-Ch) | - | - | mJ |
| Power Dissipation | PD | - | - | - | 2 | W |
| Junction-to-Ambient Thermal Resistance | RJA | - | - | - | 62.5 | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) Min. | Dimensions (mm) Max. | - | - | - | - |
| A | 1.35 | 1.75 | - | - | - | - |
| A1 | 0.10 | 0.25 | - | - | - | - |
| A2 | 1.35 | 1.55 | - | - | - | - |
| b | 0.33 | 0.51 | - | - | - | - |
| c | 0.17 | 0.25 | - | - | - | - |
| D | 4.80 | 5.00 | - | - | - | - |
| e | 1.27 REF. | - | - | - | - | - |
| E | 5.80 | 6.20 | - | - | - | - |
| E1 | 3.80 | 4.00 | - | - | - | - |
| L | 0.40 | 1.27 | - | - | - | - |
| 0 | 8 | - | - | - | - | |
2504101957_Siliup-SP1012ACP8_C22385410.pdf
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