Compact SOT23 package transistor Slkor S8050 NPN type with 05 amp collector current and 03 watt collector dissipation

Key Attributes
Model Number: S8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
350@0.05A,1V
Transition Frequency(fT):
150MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8050
Package:
SOT-23
Product Description

Product Overview

The S8050 is an NPN bipolar junction transistor (BJT) designed as a complementary component to the S8550. It is suitable for general-purpose amplification and switching applications. Key features include a continuous collector current of 0.5A and a collector dissipation of 0.3W. The transistor operates within a junction temperature of 150 and a storage temperature range of -55 to 150.

Product Attributes

  • Complementary to S8550
  • Package Type: SOT-23
  • Pin Configuration: 1. BASE, 2. EMITTER, 3. COLLECTOR

Technical Specifications

Parameter Symbol Test Conditions Minimum Typical Maximum Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.5 A
Collector Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40 V , IE=0 0.1 A
Collector cut-off current ICEO VCB=20V , IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 A
DC current gain HFE(1) VCE=1V, IC= 50mA 120 350
DC current gain HFE(2) VCE=1V, IC= 500mA 50
Collector-emitter saturation voltage VCE(sat) IC=500 mA, IB= 50mA 0.6 V
Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V
Transition frequency fT VCE=6V, IC= 20mA, f=30MHz 150 MHz
CLASSIFICATION OF hFE(1)
Rank L H
Range 120-200 200-350

1912111437_Slkor-S8050_C444723.pdf

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