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quality N Channel MOSFET Siliup 2SK3018T2 60V Low RDSon SOT23 Package Suitable for Relay and Solenoid Driving factory
quality N Channel MOSFET Siliup 2SK3018T2 60V Low RDSon SOT23 Package Suitable for Relay and Solenoid Driving factory

N Channel MOSFET Siliup 2SK3018T2 60V Low RDSon SOT23 Package Suitable for Relay and Solenoid Driving

Key Attributes
Model Number: 2SK3018T2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
220mA
RDS(on):
4Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.45V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.34nC@10V
Mfr. Part #:
2SK3018T2
Package:
SOT-23
Product Description

Product Overview

The 2SK3018T2 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features a high-density cell design for extremely low RDS(on) and a rugged, reliable construction. This MOSFET is designed for direct logic-level interface with TTL/CMOS and is suitable for driving relays, solenoids, lamps, hammers, displays, memories, and transistors. It is also ideal for battery-operated systems and solid-state relays.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: Siliup
  • Device Type: N-Channel MOSFET
  • Package: SOT-23
  • Circuit Diagram Marking: KN

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
On-Resistance RDS(on)TYP @10V 1.5
On-Resistance RDS(on)TYP @4.5V 1.8
Continuous Drain Current ID 0.22 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 0.22 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient RJA 357 /W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250A 60 V
Zero gate voltage drain current IDSS VDS =48V,VGS = 0V 1 A
Gate-body leakage current IGSS VGS =20V, VDS = 0V 5 A
Gate threshold voltage VGS(th) VDS = VGS, ID =250A 0.8 1 1.45 V
Drain-source on-resistance RDS(on) VGS =10V, ID =500mA 1.5 3
Drain-source on-resistance RDS(on) VGS =4.5V, ID =200mA 1.8 4
Input Capacitance Ciss VDS=25V,VGS=0V,f=1MHz 27 pF
Output Capacitance Coss 13 pF
Reverse Transfer Capacitance Crss 6 pF
Turn-on delay time td(on) VDD=30V,ID=0.29A, VGS=10V,RG=6 5 nS
Rise time tr 18 nS
Turn-off delay time td(off) 36 nS
Fall time tf 14 nS
Total Gate Charge Qg VGS=10V,VDS=15V,ID=1A 1.34 nC
Gate-Source Charge Qgs 0.29 -
Gate-Drain Charge Qg d 0.2 -
Diode Forward voltage VSD VGS =0V, IS=500mA 0.5 1.4 V
Package Information (SOT-23)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0o 8o

2411212332_Siliup-2SK3018T2_C41349571.pdf

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