N Channel 100V Power MOSFET Featuring Low Gate Charge and Fast Switching Siliup SP010N04BGTQ for DC DC Converters
Key Attributes
Model Number:
SP010N04BGTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
125A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.9mΩ@10V;6.4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.97nF
Output Capacitance(Coss):
1.125nF
Pd - Power Dissipation:
185W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP010N04BGTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N04BGTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-performance applications. It features fast switching speeds, low gate charge, and low Rdson, enabled by advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters, motor control, and portable equipment applications.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N04BGTQ
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 100 | V | |||
| Gate-Source Voltage | VGSS | ±20 | V | |||
| Continuous Drain Current (Tc=25°C) | ID | 125 | A | |||
| Continuous Drain Current (Tc=100°C) | ID | 83 | A | |||
| Pulse Drain Current Tested | IDM | 500 | A | |||
| Single Pulsed Avalanche Energy | EAS | VDD=50V, VGS=10V, L=0.5mH, Rg=25Ω | 361 | mJ | ||
| Power Dissipation (Tc=25°C) | PD | 185 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.68 | °C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250µA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V, TJ=25°C | - | - | 1 | µA |
| Gate-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250µA | 1 | 2 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 4.9 | 6.1 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 6.4 | 8.5 | mΩ |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | - | 2970 | - | pF |
| Output Capacitance | Coss | - | 1125 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 24 | - | pF | |
| Total Gate Charge | Qg | VDS=50V, VGS=10V, ID=50A | - | 42 | - | nC |
| Gate-Source Charge | Qgs | - | 27 | - | ||
| Gate-Drain Charge | Qgd | - | 7.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=50V, VGS=10V, RG=3Ω, ID=50A | - | 12.1 | - | nS |
| Rise Time | Tr | - | 17.4 | - | ||
| Turn-Off Delay Time | Td(off) | - | 47 | - | ||
| Fall Time | Tf | - | 32 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25°C | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 125 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, Tj=25°C | - | 32 | - | nS |
| Reverse Recovery Charge | Qrr | - | 146 | - | nC | |
| TO-220-3L Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| Φ | 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP010N04BGTQ_C22385395.pdf
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