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quality 100V N Channel MOSFET Siliup BSS123 SOT 23 Package Ideal for Portable Appliances Load Switch Devices factory
quality 100V N Channel MOSFET Siliup BSS123 SOT 23 Package Ideal for Portable Appliances Load Switch Devices factory

100V N Channel MOSFET Siliup BSS123 SOT 23 Package Ideal for Portable Appliances Load Switch Devices

Key Attributes
Model Number: BSS123
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
170mA
RDS(on):
9Ω@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Output Capacitance(Coss):
15pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
60pF
Gate Charge(Qg):
2nC
Mfr. Part #:
BSS123
Package:
SOT-23
Product Description

Product Overview

The BSS123 is a 100V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed with an advanced trench cell structure for high-speed switching. It is suitable for applications such as portable appliances and load switch appliances. The MOSFET is available in a SOT-23 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Package: SOT-23
  • Model: BSS123

Technical Specifications

Parameter Symbol Test Condition Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 100 V
RDS(on) @10V 4
RDS(on) @4.5V 4.3
Continuous Drain Current ID 170 mA
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID 170 mA
Power Dissipation PD 0.35 W
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ +150
Electrical Characteristics (TA=25 oC, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 100 V
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 1.3 2 2.5 V
Gate-Body Leakage IGSS VDS=0V, VGS=20V 10 A
Zero Gate Voltage Drain Current IDSS VDS=80V, VGS=0V 1 A
Drain-Source On-Resistance RDS(ON) VGS=10V, ID=250mA 4 6
Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=200mA 4.3 9
Total Gate Charge Qg VDS=10V, VGS=10V, ID=220mA 2 nC
Gate-Source Charge Qgs 0.25
Gate-Drain Charge Qg 0.4
Input Capacitance Ciss VDS=25V, VGS=0V, f=1MHz 60 pF
Output Capacitance Coss 15 pF
Reverse Transfer Capacitance Crss 6 pF
Turn-On Delay Time td(on) VDD=30V, VGS=10V, ID=280mA, RG=50 8 ns
Turn-On Rise Time tr 8 ns
Turn-Off Delay Time td(off) 13 ns
Turn-Off Fall Time tf 16 ns
Diode Forward Voltage VSD IS=400mA, VGS=0V 1.3 V
Package Information (SOT-23)
Symbol Dimensions In Millimeters Min. Max.
A 0.90 1.15
A1 0.00 0.10
A2 0.90 1.05
b 0.30 0.50
c 0.08 0.15
D 2.80 3.00
E 1.20 1.40
E1 2.25 2.55
e 0.95 REF.
e1 1.80 2.00
L 0.55 REF.
L1 0.30 0.50
0o 8o

2411212332_Siliup-BSS123_C41355122.pdf

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