Power Switching MOSFET Siliup SP70N07HTQ 70V N Channel with Low Gate Charge and High Current Rating
Product Overview
The SP70N07HTQ is a 70V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, DC-DC converters, and power management, this MOSFET features fast switching, low gate charge, and low RDS(on). It offers a continuous drain current of 90A at 25 and is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 70N07H
- Marking: 70N07H
- Package: TO-220-3L
- Material: Silicon
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | - | - | - | - | 70 | V |
| RDS(on)TYP | - | @10V | - | 7.4 | - | m |
| ID | - | - | - | - | 90 | A |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | - | - | - | 70 | V |
| Gate-Source Voltage | VGS | - | - | 20 | - | V |
| Continuous Drain Current (Tc=25) | ID | - | - | - | 90 | A |
| Continuous Drain Current (Tc=100) | ID | - | - | - | 60 | A |
| Pulsed Drain Current | IDM | - | - | - | 360 | A |
| Single Pulse Avalanche Energy | EAS | 1 | - | - | 340 | mJ |
| Power Dissipation (Tc=25) | PD | - | - | - | 130 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 0.96 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 70 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS=56V , VGS=0V , TJ=25 | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=30A | - | 7.4 | 9.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 4062 | - | pF |
| Output Capacitance | Coss | - | - | 261 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 231 | - | pF |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 35 | - | nC |
| Gate-Source Charge | Qgs | - | - | 11 | - | - |
| Gate-Drain Charge | Qg d | - | - | 9 | - | - |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V,VGS=10V,RG=6,ID=20A | - | 15 | - | nS |
| Rise Time | tr | - | - | 94 | - | - |
| Turn-Off Delay Time | td(off) | - | - | 46 | - | - |
| Fall Time | tf | - | - | 32 | - | - |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 90 | A |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 30 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 42 | - | nC |
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | - | - | - | - |
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | - | - | - | - |
| b | 0.710 - 0.910 | 0.028 - 0.036 | - | - | - | - |
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | - | - | - | - |
| c | 0.330 - 0.650 | 0.013 - 0.026 | - | - | - | - |
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | - | - | - | - |
| D | 9.910 - 10.250 | 0.390 - 0.404 | - | - | - | - |
| E | 8.950 - 9.750 | 0.352 - 0.384 | - | - | - | - |
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | - | - | - | - |
| e | 2.540 TYP. | 0.100 TYP. | - | - | - | - |
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | - | - | - | - |
| F | 2.650 - 2.950 | 0.104 - 0.116 | - | - | - | - |
| H | 7.900 - 8.100 | 0.311 - 0.319 | - | - | - | - |
| h | 0.000 - 0.300 | 0.000 - 0.012 | - | - | - | - |
| L | 12.900 - 13.400 | 0.508 - 0.528 | - | - | - | - |
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | - | - | - | - |
| V | 6.900 REF. | 0.276 REF. | - | - | - | - |
| 3.400 - 3.800 | 0.134 - 0.150 | - | - | - | - | |
2504101957_Siliup-SP70N07HTQ_C41354984.pdf
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