Surface mount 40V MOSFET Siliup SP4011ACTM designed for load switching and power management electronics

Key Attributes
Model Number: SP4011ACTM
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
329pF
Pd - Power Dissipation:
78W
Input Capacitance(Ciss):
3.8nF
Gate Charge(Qg):
69nC@10V
Mfr. Part #:
SP4011ACTM
Package:
TO-252-4L
Product Description

Product Overview

The SP4011ACTM is a 40V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this lead-free product is available in a surface mount package and is 100% avalanche energy tested. It is suitable for applications such as battery protection, load switching, and power management.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP4011ACTM
  • Package Type: TO-252-4L
  • Material: Lead-free

Technical Specifications

Parameter Symbol N-Channel Conditions N-Channel Min. N-Channel Typ. N-Channel Max. N-Channel Unit P-Channel Conditions P-Channel Min. P-Channel Typ. P-Channel Max. P-Channel Unit
Absolute Maximum Ratings VDS - 40 - - V - -40 - - V
VGS - - ±20 - V - ±20 - - V
ID (TC=25) - 60 - - A - -37 - - A
ID (TC=100) - 40 - - A - -25 - - A
IDM - 240 - - A - -148 - - A
EAS (Single Pulse Avalanche Energy) - 100 - - mJ 144 - - mJ
PD (TC=25) - 78 - - W - - - - W
RJC (Junction-to-Case) - - 1.6 - /W - - - - /W
TSTG (Storage Temperature Range) - -55 - 150 -55 - 150
TJ (Operating Junction Temperature Range) - -55 - 150 -55 - 150
Static Characteristics BVDSS VGS=0V, ID=250uA 40 - - V VGS=0V, ID=-250uA -40 - - V
IDSS VDS=32V, VGS=0V, TJ=25 - - 1 uA VDS=-32V, VGS=0V, TJ=25 - - -1 uA
IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=±20V, VDS=0V - - ±100 nA
VGS(th) VGS=VDS, ID =250uA 1 1.7 2.5 V VGS=VDS, ID =-250uA -1 -1.5 -2.5 V
RDS(ON) (Static Drain-Source On-Resistance) VGS=10V, ID=20A - 6.5 8 m VGS=-10V, ID=-20A - 11 15 m
VGS=4.5V, ID=15A - 8.5 11.5 m VGS=-4.5V, ID=-10A - 16 22 m
Dynamic Characteristics Ciss VDS=20V, VGS=0V, f=1MHz - 2443 - pF VDS=-20V, VGS=0V, f=1MHz - 3800 - pF
Coss - - 167 - pF - - 329 - pF
Crss - - 138 - pF - - 289 - pF
Total Gate Charge Qg VDS=20V, VGS=10V, ID=20A - 49 - nC VDS=-20V, VGS=-10V, ID=-20A - 69 - nC
Qgs - - 11 - nC - - 11 - nC
Qgd - - 9 - nC - - 13 - nC
Switching Characteristics Td(on) (Turn-On Delay Time) VDD=20V, VGS=10V, RG=3, ID=20A - 11 - nS VDD=-20V, VGS=-10V, RG=3, ID=-20A - 11 - nS
Tr (Rise Time) - - 27 - nS - - 81 - nS
Td(off) (Turn-Off Delay Time) - - 41 - nS - - 95 - nS
Tf (Fall Time) - - 8 - nS - - 73 - nS
Diode Characteristics VSD (Diode Forward Voltage) VGS=0V, IS=1A, TJ=25 - - 1.2 V VGS=0V, IS=-1A, TJ=25 - - -1.2 V
IS (Maximum Body-Diode Continuous Current) - - 60 - A - - -37 - A
Reverse Recovery Trr IS=20A, di/dt=100A/us, TJ=25 - 12 - nS IS=-20A, di/dt=100A/us, TJ=25 - 21 - nS
Qrr - - 6 - nC - - 12 - nC
Package Dimensions (TO-252-4L)
Symbol Dimensions In Millimeters Min. Max. - - - - - - - -
A - 2.20 2.40 - - - - - - - -
A1 - 0 0.15 - - - - - - - -
b - 0.40 0.60 - - - - - - - -
b2 - 0.50 0.80 - - - - - - - -
b3 - 5.20 5.50 - - - - - - - -
c2 - 0.45 0.55 - - - - - - - -
D - 5.40 5.80 - - - - - - - -
D1 - 4.57 - - - - - - - - -
E - 6.40 6.80 - - - - - - - -
E1 - 3.81 - - - - - - - - -
e REF. 1.27 - - - - - - - - -
F - 0.40 0.60 - - - - - - - -
H - 9.40 10.20 - - - - - - - -
L - 1.40 1.77 - - - - - - - -
L1 - 2.40 3.00 - - - - - - - -
L4 - 0.80 1.20 - - - - - - - -

2504101957_Siliup-SP4011ACTM_C45351220.pdf

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