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quality High voltage bipolar transistor Slkor CZT5401 featuring SOT223 package for electronic circuit design factory
quality High voltage bipolar transistor Slkor CZT5401 featuring SOT223 package for electronic circuit design factory

High voltage bipolar transistor Slkor CZT5401 featuring SOT223 package for electronic circuit design

Key Attributes
Model Number: CZT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
DC Current Gain:
100@10mA,5V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
500mV@50mA,5mA
Pd - Power Dissipation:
1W
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
CZT5401
Package:
SOT-223
Product Description

Product Overview

The CZT5401 is a high-voltage bipolar transistor designed for high-voltage applications. It offers robust performance with key electrical characteristics such as high DC current gain and defined breakdown voltages. The device is supplied in a SOT-223 package, suitable for various electronic circuits requiring reliable high-voltage amplification.

Product Attributes

  • Device Code: CZT5401
  • Package Type: SOT-223
  • Manufacturer: SLKORmicro (implied by website URL)

Technical Specifications

Symbol Parameter Condition Min Typ Max Unit
Maximum Ratings (Ta=25 unless otherwise noted)
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -0.6 A
PC Collector Power Dissipation 1 W
RJA Thermal Resistance Junction-to-Ambient 125 C/W
TJ,Tstg Operation Junction and Storage Temperature Range -55 +150 C
Electrical Characteristics (TJ=25 unless otherwise noted)
V(BR)CBO Collector-base breakdown voltage IC=-0.1mA, IE=0 -160 V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA, IB=0 -150 V
V(BR)EBO Emitter-base breakdown voltage IE=-0.01mA, IC=0 -5 V
ICBO Collector cut-off current VCB=-120V , IE=0 -50 nA
IEBO Emitter cut-off current VEB= -3V , IC=0 -50 nA
hFE(1) DC current gain VCE=-5V, IC= -1mA 50
hFE(2) DC current gain VCE=-5V, IC= -10mA 100 300
hFE(3) DC current gain VCE=-5V, IC= -50mA 50
VCE(sat) Collector-emitter saturation voltage IC=-10mA, IB= -1mA -0.2 V
VCE(sat) Collector-emitter saturation voltage IC=-50mA, IB= -5mA -0.5 V
VBE(sat) Base-emitter saturation voltage IC=-10mA, IB= -1mA -1 V
VBE(sat) Base-emitter saturation voltage IC=-50mA, IB= -5mA -1 V
fT Transition frequency VCE=-10V, IC= -10mA,f=100MHz 100 300 MHz
Cob Collector output capacitance VCB=-10V,IE=0,f=1MHz 6 pF
Package Dimensions (SOT-223)
Symbol Description Unit Min Max Min (Inches) Max (Inches)
A Height mm 1.800 0.071
A1 Height mm 0.020 0.100 0.001 0.004
A2 Height mm 1.500 1.700 0.059 0.067
b Width mm 0.660 0.840 0.026 0.033
b1 Width mm 2.900 3.100 0.114 0.122
c Width mm 0.230 0.350 0.009 0.014
D Length mm 6.300 6.700 0.248 0.264
E Length mm 6.700 7.300 0.264 0.287
E1 Length mm 3.300 3.700 0.130 0.146
e Pitch mm 2.300(BSC) 0.091(BSC)
L Length mm 0.750 0.030
Angle 0 10 0 10

2411121621_Slkor-CZT5401_C42380678.pdf

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