60 volt dual n channel mosfet Siliup SP60N13DP8 designed for high frequency circuits and power switching
Key Attributes
Model Number:
SP60N13DP8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
8A
RDS(on):
13mΩ@10V;18mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
2 N-Channel
Output Capacitance(Coss):
130pF
Input Capacitance(Ciss):
2.403nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
39nC@10V
Mfr. Part #:
SP60N13DP8
Package:
SOP-8L
Product Description
Product Overview
The SP60N13DP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 60N13D
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) TYP | @10V | 13 | 18 | m | ||
| ID | 8 | A | ||||
| RDS(on) TYP | @4.5V | 18 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulsed Drain Current | IDM | 32 | A | |||
| Single pulsed avalanche energy1 | EAS | 30 | mJ | |||
| Power Dissipation | PD | 3 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 41.7 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=8A | - | 13 | 18 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=6A | - | 18 | 26 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=30V , VGS=0V , f=1MHz | - | 2403 | - | pF |
| Output Capacitance | Coss | - | 130 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 116 | - | pF | |
| Total Gate Charge | Qg | VDS=30V , VGS=10V , ID=5A | - | 39 | - | nC |
| Gate-Source Charge | Qgs | - | 5.6 | - | nC | |
| Gate-Drain Charge | Qgd | - | 9.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, VGS=10V , RG=3, ID=5A | - | 7.8 | - | nS |
| Rise Time | tr | - | 48 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 28 | - | nS | |
| Fall Time | tf | - | 30 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 8 | A | |
| Reverse Recovery Time | trr | IS=5A, di/dt=100A/us, TJ=25 | - | 19 | - | nS |
| Reverse Recovery Charge | Qrr | - | 84 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1. EAS Test condition is VDD=30V, VGS =10V, L = 0.5mH, Rg=25
Order Information: Device: SP60N13DP8, Package: SOP-8L, Unit/Tape: 4000
Marking: 60N13D (Device Code), * (Week Code)
2504101957_Siliup-SP60N13DP8_C41355075.pdf
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