Siliup SP40N16TS 40V N Channel MOSFET Featuring Low On Resistance and High Current Handling Capability
Key Attributes
Model Number:
SP40N16TS
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
8A
RDS(on):
16mΩ@10V;19mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-channel
Output Capacitance(Coss):
110pF
Input Capacitance(Ciss):
1.061nF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
SP40N16TS
Package:
SOT-23-6L
Product Description
Product Overview
The SP40N16TS is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features high power and current handling capability and is suitable for surface mount applications. Key applications include battery switches and DC/DC converters. The device offers a low on-resistance of 16m at 10V and 19m at 4.5V, with a continuous drain current of 8A.Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP
- Model: SP40N16TS
- Technology: N-Channel MOSFET
- Package: SOT-23-6L
- Device Code: 40N16
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | @10V | 16 | m | |||
| RDS(on) | @4.5V | 19 | m | |||
| Continuous Drain Current | ID | 8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulse Drain Current | IDM | Tested | 32 | A | ||
| Power Dissipation | PD | 1.1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 113 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID =7A | - | 16 | 22 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID =6A | - | 19 | 26 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1061 | - | pF |
| Output Capacitance | Coss | - | 110 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 95 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=10A | - | 23 | - | nC |
| Gate-Source Charge | Qgs | - | 6.3 | - | ||
| Gate-Drain Charge | Qgd | - | 5.3 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=1.5 , ID=8A | - | 5.5 | - | nS |
| Turn-On Rise Time | tr | - | 14 | - | ||
| Turn-Off Delay Time | td(off) | - | 25 | - | ||
| Turn-Off Fall Time | tf | - | 4.6 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-23-6L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min | Max | Min | Max |
| A | 1.050 | 1.250 | 0.041 | 0.049 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 1.050 | 1.150 | 0.041 | 0.045 | ||
| b | 0.300 | 0.500 | 0.012 | 0.020 | ||
| c | 0.100 | 0.200 | 0.004 | 0.008 | ||
| D | 2.820 | 3.020 | 0.111 | 0.119 | ||
| E | 1.500 | 1.700 | 0.059 | 0.067 | ||
| E1 | 2.650 | 2.950 | 0.104 | 0.116 | ||
| e | 0.950(BSC) | 0.037(BSC) | ||||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 | ||
| L | 0.300 | 0.600 | 0.012 | 0.024 | ||
| 0 | 8 | 0 | 8 | |||
2504101957_Siliup-SP40N16TS_C41354926.pdf
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