40V N Channel MOSFET Siliup SP40N03NK ROHS Compliant Halogen Free Component for Power Electronics

Key Attributes
Model Number: SP40N03NK
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3mΩ@10V;4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
1 N-channel
Output Capacitance(Coss):
421pF
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
5.595nF
Gate Charge(Qg):
65nC@10V
Mfr. Part #:
SP40N03NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP40N03NK is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for surface mounting, this ROHS Compliant & Halogen-Free component features fast switching speeds and a 100% Single Pulse avalanche energy test. It is ideal for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Line: SP40N03NK
  • Channel Type: N-Channel
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Breakdown Voltage (Drain-Source) V(BR)DSS 40 V
On-Resistance (Typical) RDS(on)TYP @10V 3 m
On-Resistance (Typical) RDS(on)TYP @4.5V 4 m
Continuous Drain Current ID 105 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) 40 V
Gate-Source Voltage VGSS (Ta=25) 20 V
Continuous Drain Current ID (Tc=25C) 105 A
Continuous Drain Current ID (Tc=100C) 70 A
Pulse Drain Current IDM (Tested) 420 A
Single Pulsed Avalanche Energy EAS 1 462 mJ
Power Dissipation PD (Tc=25C) 83 W
Thermal Resistance Junction-to-Case RJC 1.5 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 3 3.8 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =10A - 4 5.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=20V , VGS=0V , f=1MHz - 5595 - pF
Output Capacitance Coss - 421 - pF
Reverse Transfer Capacitance Crss - 380 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=30A - 65 - nC
Gate-Source Charge Qgs - 11 -
Gate-Drain Charge Qg d - 16 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V VGS=10V , RG=3, ID=30A - 12 - nS
Rise Time Tr - 16 -
Turn-Off Delay Time Td(off) - 37 -
Fall Time Tf - 14 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 105 A
Reverse recover time Trr IS=30A, di/dt=100A/us, Tj=25 - 23 - nS
Reverse recovery charge Qrr - 10 - nC
PDFN5X6-8L Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

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