Low Gate Charge 150V N Channel Power MOSFET Siliup SP015N03BGHTD with Split Gate Trench Technology
Key Attributes
Model Number:
SP015N03BGHTD
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
220A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
1 N-channel
Output Capacitance(Coss):
1.306nF
Input Capacitance(Ciss):
10.56nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
SP015N03BGHTD
Package:
TO-263-3L
Product Description
Product Overview
The SP015N03BGHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for high-frequency applications and power management, making it suitable for PWM applications and hard-switched, high-frequency circuits. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 015N03BGH
- Package: TO-263
- Technology: Split Gate Trench
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 150 | V | |||
| RDS(on) | RDS(on) | @10V | 3.6 | m | ||
| Continuous Drain Current | ID | 220 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 150 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 220 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 150 | A | ||
| Pulsed Drain Current | IDM | 880 | A | |||
| Single Pulse Avalanche Energy | EAS | 1521 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 300 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.6 | 4.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 8538 | - | pF |
| Output Capacitance | Coss | - | 772 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 122 | - | nC |
| Gate-Source Charge | Qgs | - | 48 | - | nC | |
| Gate-Drain Charge | Qgd | - | 33 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 33 | - | nS |
| Rise Time | Tr | - | 59 | - | ||
| Turn-Off Delay Time | Td(off) | - | 89 | - | nS | |
| Fall Time | Tf | - | 48 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 220 | A | |
| Reverse Recovery Time | Trr | IS=80A, di/dt=100A/us, TJ=25 | - | 96 | - | nS |
| Reverse Recovery Charge | Qrr | - | 310 | - | nC | |
Package Information (TO-263)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
2504101957_Siliup-SP015N03BGHTD_C22385370.pdf
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