General purpose dual transistor Slkor MBT3946 silicon NPN and PNP transistors in compact SOT363 package

Key Attributes
Model Number: MBT3946
Product Custom Attributes
Current - Collector Cutoff:
-
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
300MHz;250MHz
Vce Saturation(VCE(sat)):
300mV
Type:
NPN+PNP
Pd - Power Dissipation:
150mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MBT3946
Package:
SOT-363
Product Description

Product Overview

The MBT3946 is a dual general-purpose NPN+PNP silicon transistor designed for various applications. It offers a combination of NPN and PNP transistors in a single package, providing flexibility for circuit design. This device is suitable for general-purpose amplification and switching applications.

Product Attributes

  • Brand: slkormicro.com
  • Model: MBT3946
  • Package Type: SOT-363 (SC-88)
  • Material: Silicon

Technical Specifications

Symbol Parameter NPN Min NPN Max PNP Min PNP Max Unit Conditions
Maximum Ratings
VCEO Collector-Emitter Voltage 40 -40 Vdc
VCBO Collector-Base Voltage 60 -40 Vdc
VEBO Emitter-Base Voltage 6.0 -5.0 Vdc
IC Collector Current-Continuous 200 -200 mAdc
PD Total Package Dissipation 833 mW TA=25C
R JA Thermal Resistance, Junction to Ambient 150 C/W Device Mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
TJ, Tstg Junction and Storage Temperature -55 +150 C
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage 50 -40 Vdc IC=1.0mAdc, IB=0
V(BR)CBO Collector-Base Breakdown Voltage 50 -40 Vdc IC=10Adc, IE=0
V(BR)EBO Emitter-Base Breakdown Voltage 6.0 -5.0 Vdc IE=10Adc, IC=0
IBL Base Cutoff Current -50 -50 nAdc VCE=30Vdc, VEB=3.0Vdc
ICEX Collector Cutoff Current -50 -50 nAdc VCE=30Vdc, VEB=3.0Vdc
On Characteristics
hFE DC Current Gain 30 300 30 300 IC=0.1mAdc, VCE=1.0Vdc
hFE DC Current Gain 60 300 60 300 IC=1.0mAdc, VCE=1.0Vdc
hFE DC Current Gain 100 300 100 300 IC=10mAdc, VCE=1.0Vdc
hFE DC Current Gain 60 300 60 300 IC=50mAdc, VCE=1.0Vdc
hFE DC Current Gain 30 300 30 300 IC=100mAdc, VCE=1.0Vdc
VCE(sat) Collector-Emitter Saturation Voltage -0.85 0.85 Vdc IC=10mAdc, IB=1.0mAdc
VCE(sat) Collector-Emitter Saturation Voltage -0.85 0.85 Vdc IC=50mAdc, IB=5.0mAdc
VBE(sat) Base-Emitter Saturation Voltage -0.95 0.95 Vdc IC=10mAdc, IB=1.0mAdc
VBE(sat) Base-Emitter Saturation Voltage -0.95 0.95 Vdc IC=50mAdc, IB=5.0mAdc
Small-signal Characteristics
fT Current-Gain-Bandwidth Product 250 250 MHz IC=10mAdc, VCE=20Vdc, f=100MHz
Cobo Output Capacitance 1.0 1.0 pF VCB=5.0Vdc, IE=0, f=1.0MHz
Cibo Input Capacitance 10.0 10.0 pF VEB=0.5Vdc, IC=0, f=1.0MHz
hie Input Impedance 2.0 2.0 k Ohms VCE=10Vdc, IC=1.0mAdc, f=1.0kHz
hre Voltage Feedback Ratio 0.1 0.1 x10^-4 VCE=10Vdc, IC=1.0mAdc, f=1.0kHz
hfe Small-Signal Current Gain 100 400 100 400 VCE=10Vdc, IC=1.0mAdc, f=1.0kHz
hoe Output Admittance 3.0 3.0 mhos VCE=10Vdc, IC=1.0mAdc, f=1.0kHz
NF Noise Figure 4.0 4.5 dB VCE=5.0Vdc, IC=100Adc, RS=1.0k ohms, f=1.0kHz
Switching Characteristics
td Delay Time 35 35 ns Vcc=3.0Vdc, VBE=-0.5Vdc, Ic=10mAdc, IB1=IB2=1.0mAdc
tr Rise Time 35 35 ns Vcc=3.0Vdc, Ic=10mAdc
ts Storage Time 75 75 ns Ic=10mAdc, IB1=1.0mAdc
tf Fall Time 35 35 ns Ic=-10mAdc, VCE=-20Vdc, f=100MHz
Package Outline Dimensions
Dim A B C D E H J
Min 0.10 1.15 2.00 0.30 1.80 0.80 0.25
Max 0.30 1.35 2.20 0.40 2.20 1.10 0.40
Unit mm mm mm mm mm mm mm

2004140933_Slkor-MBT3946_C513464.pdf

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