Dual p channel mosfet Siliup SP30P08DP8 30 volt designed for ups systems and power switching circuits
Key Attributes
Model Number:
SP30P08DP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
RDS(on):
8mΩ@10V;11mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
280pF
Number:
2 P-Channel
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
2.9nF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
SP30P08DP8
Package:
SOP-8L
Product Description
Product Overview
The SP30P08DP8 is a 30V Dual P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and Uninterruptible Power Supply (UPS) systems. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP30P08DP8
- Device Code: 30P08D
- Package: SOP-8L
- Marking: 30P08D :Device Code, * :Week Code
- Website: www.siliup.com
Technical Specifications
| Product Summary | ||
| V(BR)DSS | RDS(on)TYP | ID |
| -30V | 8m@-10V 11m@-4.5V | -12A |
| Absolute maximum ratings (Ta=25, unless otherwise noted) | |||
| Parameter | Symbol | Rating | Units |
|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | -12 | A |
| Pulsed Drain Current | IDM | -48 | A |
| Single pulsed avalanche energy | EAS | 36 | mJ |
| Power Dissipation | PD | 2 | W |
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W |
| Storage Temperature Range | TSTG | -55 to 150 | |
| Operating Junction Temperature Range | TJ | -55 to 150 | |
| Electrical characteristics (Ta=25, unless otherwise noted) | ||||||
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-10A | - | 8 | 10 | m |
| VGS=-4.5V , ID=-8A | - | 11 | 16 | m | ||
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 2900 | - | pF |
| Output Capacitance | Coss | - | 410 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 280 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | - | 48 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | ||
| Gate-Drain Charge | Qg d | - | 14 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | - | 15 | - | nS |
| Rise Time | Tr | - | 11 | - | ||
| Turn-Off Delay Time | Td(off) | - | 44 | - | ||
| Fall Time | Tf | - | 21 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -12 | A | |
| Reverse recover time | Trr | IS=-10A, di/dt=100A/us, TJ=25 | - | 42 | - | nS |
| Reverse recovery charge | Qrr | - | 19 | - | nC | |
| SOP-8L Package Information | |
| Symbol | Dimensions In Millimeters |
|---|---|
| A | 1.35 - 1.75 |
| A1 | 0.10 - 0.25 |
| A2 | 1.35 - 1.55 |
| b | 0.33 - 0.51 |
| c | 0.17 - 0.25 |
| D | 4.80 - 5.00 |
| e | 1.27 REF. |
| E | 5.80 - 6.20 |
| E1 | 3.80 - 4.00 |
| L | 0.40 - 1.27 |
| 0 - 8 | |
| Order Information | ||
| Device | Package | Unit/Tape |
| SP30P08DP8 | SOP-8L | 4000 |
2504101957_Siliup-SP30P08DP8_C41355081.pdf
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