86--136 6733 2386
quality General Purpose NPN Transistor Slkor MMST3904 with SOT-323 Package and 40V Collector Emitter Voltage factory
quality General Purpose NPN Transistor Slkor MMST3904 with SOT-323 Package and 40V Collector Emitter Voltage factory

General Purpose NPN Transistor Slkor MMST3904 with SOT-323 Package and 40V Collector Emitter Voltage

Key Attributes
Model Number: MMST3904
Product Custom Attributes
Current - Collector Cutoff:
60nA
Emitter-Base Voltage(Vebo):
5V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMST3904
Package:
SOT-323
Product Description

MMST3904 NPN Transistor

Product Overview

The MMST3904 is an NPN bipolar junction transistor designed for general-purpose applications. It offers a collector current capability of 0.2A and a collector-emitter voltage of 40V, making it suitable for various switching and amplification tasks in electronic circuits. This transistor is housed in a compact SOT-323 package, ideal for space-constrained designs.

Product Attributes

  • Brand: SLKORMicro
  • Type: NPN Transistor
  • Package: SOT-323
  • Marking: K2N

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Features
Collector Current Capability IC 0.2 A
Collector Emitter Voltage VCEO 40 V
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage VCBO 60 V
Collector - Emitter Voltage VCEO 40 V
Emitter - Base Voltage VEBO 5 V
Collector Current - Continuous IC 200 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance Junction To Ambient RJA 625 /W
Junction Temperature TJ 150
Storage Temperature Range Tstg -55 150
Electrical Characteristics (Ta = 25)
Collector-base breakdown voltage VCBO Ic= 100 A IE= 0 (Note.1) 60 V
Collector- emitter breakdown voltage VCEO Ic= 1 mA IB= 0 40 V
Emitter - base breakdown voltage VEBO IE= 100A IC= 0 5 V
Collector-base cut-off current ICBO VCB= 60 V , IE= 0 (Note.1) 60 nA
Collector- emitter cut-off current ICEO VCE= 40 V , IE= 0 (Note.1) 700 nA
Collector- emitter cut-off current ICEX VCE= 30 V ,VBE(off)= 3V 50 nA
Emitter cut-off current IEBO VEB= 5V , IC=0 100 nA
Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB=1 mA 0.25 V
IC=50 mA, IB=5 mA 0.3 V
Base - emitter saturation voltage VBE(sat) IC=10 mA, IB=1 mA 0.85 V
IC=50 mA, IB=5 mA 0.95 V
DC current gain hFE VCE=1V, IC= 100 uA 40
VCE=1V, IC= 1 mA 70
VCE=1V, IC= 10 mA 100 300
VCE=1V, IC= 50 mA 60
Delay time td 35 nS
Rise time tr 35 nS
Storage time ts 225 nS
Fall time tf 75 nS
Collector input capacitance Cib VEB= 0.5V, IE= 0,f=1MHz 8 pF
Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz 4 pF
Transition frequency fT VCE= 20V, IC=10mA,f=100MHz 300 MHz
Dimensions (mm)
A 1.8 2.2 mm
B 1.35 1.75 mm
A1 0.1 0.25 mm
Lp 0.45 0.75 mm
Q 0.1 0.3 mm
c 0.1 0.23 mm
D 2.0 2.4 mm
E 1.15 1.35 mm
e 1.3 mm
e1 0.65 mm
HE 1.1 1.4 mm
v 0.25 0.45 mm
w 0.13 0.2 mm

Note.1: Pulse test: pulse width 300s, duty cycle 2.0%.


2312160125_Slkor-MMST3904_C19632451.pdf

Related Products
quality IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes factory
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
quality Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current factory
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW factory
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.