Low input capacitance N channel MOSFET Siliup SP30N16NQ designed for power management and converter
Key Attributes
Model Number:
SP30N16NQ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
416pF
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
SP30N16NQ
Package:
DFN-6L(2x2)
Product Description
Product Overview
The SP30N16NQ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features low on-resistance and low input capacitance, making it suitable for power management functions and DC-DC converters. This MOSFET is available in a PDFN2X2-6L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30N16
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | |
| Product Summary | |||||||
| V(BR)DSS | - | - | - | - | 30 | V | |
| RDS(on)TYP | - | @10V | - | 16 | - | m | |
| RDS(on)TYP | - | @4.5V | - | 25 | - | m | |
| ID | - | - | - | - | 8 | A | |
| Absolute maximum ratings (Ta=25 unless otherwise noted) | |||||||
| Drain-Source Voltage | VDS | - | - | - | 30 | V | |
| Gate-Source Voltage | VGS | - | - | 12 | - | V | |
| Continuous Drain Current | ID | - | - | - | 8 | A | |
| Pulsed Drain Current | IDM | - | - | - | 32 | A | |
| Power Dissipation | PD | - | - | - | 1.8 | W | |
| Thermal Resistance from Junction-to-Ambient | RJA | - | - | - | 69.4 | /W | |
| Operating Junction Temperature Range | TSTG | - | -55 | ~ | +150 | ||
| Storage Temperature Range | TJ | - | -55 | ~ | +150 | ||
| Electrical characteristics (TA=25 oC, unless otherwise noted) | |||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA | |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.2 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =6A | - | 16 | 25 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =4A | - | 25 | 35 | m | |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 416 | - | pF | |
| Output Capacitance | Coss | - | - | - | 62 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | - | 51 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | - | 5 | - | nC | |
| Gate-Source Charge | Qgs | - | - | 1.1 | - | - | |
| Gate-Drain Charge | Qg d | - | - | 2.6 | - | - | |
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | - | 7.7 | - | nS | |
| Rise Time | Tr | - | - | 46 | - | - | |
| Turn-Off Delay Time | Td(off) | - | - | 11 | - | - | |
| Fall Time | Tf | - | - | 3.6 | - | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V | |
| Package Information | |||||||
| Symbol | Dimensions In Millimeters | Min. | Typ. | Max. | Unit | - | |
| A | - | 0.70 | 0.75 | 0.80 | mm | - | |
| A1 | - | 0.02 | 0.05 | - | mm | - | |
| b | - | 0.25 | 0.30 | 0.35 | mm | - | |
| b1 | - | 0.20REF | - | - | mm | - | |
| c | - | 0.203REF | - | - | mm | - | |
| D | - | 1.90 | 2.00 | 2.10 | mm | - | |
| D1 | - | 0.08 | 0.125 | 0.18 | mm | - | |
| D2 | - | 0.85 | 0.90 | 0.95 | mm | - | |
| D3 | - | 0.25 | 0.30 | 0.35 | mm | - | |
| D4 | - | 0.33 | 0.375 | 0.43 | mm | - | |
| e | - | 0.65BSC | - | - | - | - | |
| Nd | - | 1.30BSC | - | - | - | - | |
| E | - | 1.90 | 2.00 | 2.10 | mm | - | |
| E2 | - | 0.95 | 1.00 | 1.05 | mm | - | |
| E3 | - | 0.55 | 0.60 | 0.65 | mm | - | |
| L | - | 0.20 | 0.25 | 0.30 | mm | - | |
| h | - | 0.25REF | - | - | mm | - | |
2504101957_Siliup-SP30N16NQ_C41354880.pdf
Related Products
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
