86--136 6733 2386
quality Low current low voltage NPN transistor Slkor BC850B designed for general purpose amplification switching factory
quality Low current low voltage NPN transistor Slkor BC850B designed for general purpose amplification switching factory

Low current low voltage NPN transistor Slkor BC850B designed for general purpose amplification switching

Key Attributes
Model Number: BC850B
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
DC Current Gain:
200@2mA,5V
Transition Frequency(fT):
100MHz
Type:
NPN
Vce Saturation(VCE(sat)):
600mV
Pd - Power Dissipation:
250mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC850B
Package:
SOT-23
Product Description

Product Overview

The BC849-BC850 series are NPN transistors designed for low current and low voltage applications. They feature low power dissipation and are suitable for general-purpose amplification and switching.

Product Attributes

  • Brand: slkormicro
  • Product Line: BC849-BC850 NPN Transistors
  • Package Type: SOT-23

Technical Specifications

Parameter Symbol Rating Unit Conditions Min Typ Max
Absolute Maximum Ratings
Emitter-Base Voltage VEBO 5 V Ta = 25 C
Collector-Base Voltage VCBO 30 V Ta = 25 C
Collector-Emitter Voltage VCEO 50 V Ta = 25 C
Collector Current (DC) IC 100 mA Ta = 25 C
Peak Collector Current ICM 200 mA Ta = 25 C
Peak Base Current IBM 200 mA Ta = 25 C
Total Power Dissipation Ptot 250 mW Tamb = 25 C *
Storage Temperature Tstg -65 to 150 C
Junction Temperature Tj 150 C
Operating Ambient Temperature Tamb -65 to 150 C
Thermal Resistance Junction to Ambient Rth(j-a) 500 K/W * Transistor mounted on an FR4 printed-circuit board.
Electrical Characteristics
Emitter Cut-off Current IEBO nA IE = 0; VCB = 30 V 15
Emitter Cut-off Current IEBO A IE = 0; VCB = 30 V; Tj = 150 C 5
Collector Cut-off Current ICBO nA IC = 0; VEB = 5 V 100
DC Current Gain hFE IC = 10 mA; IB = 0.5 mA
BC849B; BC850B 240
BC849C; BC850C 450
DC Current Gain hFE IC = 100 mA; IB = 5 mA
BC849B; BC850B 200 290 450
BC849C; BC850C 420 520 800
Base-Emitter Saturation Voltage VBEsat mV IC = 10 mA; IB = 0.5 mA 250
Base-Emitter Saturation Voltage VBEsat mV IC = 100 mA; IB = 5 mA 600
Base-Emitter Voltage VBE mV IC = 2 mA; VCE = 5 V; hFE 700 900
Collector-Emitter Saturation Voltage VCEsat mV IC = 2 mA; VCE = 5 V; *1 580 660 700
Collector-Emitter Saturation Voltage VCEsat mV IC = 10 mA; VCE = 5 V;*2 770
Collector Capacitance Cc pF IE = ie = 0; VCB = 10 V; f = 1 MHz 2.5
Emitter Capacitance Ce pF IC = ic = 0; VEB = 500 mV; f = 1 MHz 11
Transition Frequency fT MHz IC = 10 mA; VCE = 5 V; f = 100 MHz 100
Noise Figure F dB IC = 200 A; VCE = 5 V; RS = 2 k,f = 10 Hz to 15.7 kHz 4
Noise Figure F dB IC = 200 A; VCE = 5 V; RS = 2 k,f = 1 kHz; B = 200 Hz 4
Classification
TYPE Marking
BC849B 2B
BC849C 2C
BC850B 2F
BC850C 2G
Dimensions (mm)
A 2.8 mm 2.5 3.0
A1 0.15 mm 0.1 0.2
bp 0.45 mm 0.38 0.48
c 0.15 mm 0.1 0.2
D 2.1 mm 1.9 2.5
E 1.2 mm 0.95 1.4
e mm
e1 0.55 mm 0.45
HE mm
Lp 0.9 mm 1.1
Q 0.4 mm 0.3 0.5
w 0.1 mm
v mm

2210091830_Slkor-BC850B_C5185921.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance factory
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
quality Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads factory
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating factory
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.